Advance Technical Information TM TM TrenchT3 HiperFET V = 60V IXFA270N06T3 DSS I = 270A Power MOSFET IXFP270N06T3 D25 R 3.1m DS(on) IXFH270N06T3 N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrnsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) V T = 25 C to 175 C60 V DSS J V T = 25 C to 175 C, R = 1M 60 V DGR J GS V Transient 20 V GSM G D D (Tab) S I T = 25 C 270 A D25 C I Lead Current Limit, RMS 160 A LRMS TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 675 A DM C JM I T = 25 C 135 A A C E T = 25 C 1.5 J AS C G P T = 25 C 480 W D D C D (Tab) S T -55 ... +175 C J G = Gate D = Drain T 175 C JM S = Source Tab = Drain T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 m/lb.in d International Standard Packages Weight TO-263 2.5 g 175C Operating Temperature TO-220 3.0 g High Current Handling Capability TO-247 6.0 g Avalanche Rated Fast Intrinsic Rectifier Low R DS(on) Advantages Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250 A 60 V DSS GS D Space Savings V V = V , I = 250 A 2.0 4.0 V High Power Density GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS Applications I V = V , V = 0V 10 A DSS DS DSS GS DC-DC Converters & Off-Line UPS T = 150C 1.5 mA J Primary-Side Switch R V = 10V, I = 100A, Notes 1, 2 3.1 m High Current Switching Applications DS(on) GS D 2016 IXYS CORPORATION, All Rights Reserved DS100698A(01/16) IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 83 138 S fs DS D C 12.6 nF iss C V = 0V, V = 25V, f = 1MHz 1380 pF oss GS DS C 62 pF rss R Gate Input Resistance 1.1 Gi t 39 ns d(on) Resistive Switching Times t 36 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 48 ns d(off) R = 3 (External) G t 20 ns f Q 200 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 68 nC gs GS DS DSS D D25 Q 40 nC gd R 0.31C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 270 A S GS I Repetitive, Pulse Width Limited by T 1080 A SM JM V I = 100A, V = 0V, Note 1 1.4 V F GS SD t I = 135A, V 47 ns = 0V rr F GS -di/dt = 100A/ s I 23 A RM V = 40V R Q 530 nC RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be 5mm DS(on) or less from the package body. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537