TM TM TrenchT2 HiperFET V = 75V IXFA230N075T2 DSS Power MOSFET I = 230A IXFP230N075T2 D25 R 4.2m DS(on) N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) V T = 25C to 175C75 V DSS J V T = 25C to 175C, R = 1M 75 V DGR J GS V Transient 20 V GSM I T = 25C (Chip Capability) 230 A D25 C G D D (Tab) S I Lead Current Limit, RMS 120 A LRMS I T = 25C, Pulse Width Limited by T 700 A DM C JM G = Gate D = Drain I T = 25C 115 A A C S = Source Tab = Drain E T = 25C 850 mJ AS C P T = 25C 480 W D C T -55 ... +175 C Features J T 175 C JM z International Standard Packages T -55 ... +175 C stg z 175C Operating Temperature z T 1.6mm (0.062in.) from Case for 10s 300 C High Current Handling Capability L z T Plastic Body for 10 seconds 260 C sold Avalanche Rated z Fast Intrinsic Rectifier M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d z Low R DS(on) Weight TO-263 2.5 g TO-220 3.0 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 75 V Applications DSS GS D V V = V , I = 1mA 2.0 4.0 V z GS(th) DS GS D Automotive - Motor Drives I V = 20V, V = 0V 200 nA GSS GS DS - 12V Power Bus I V = V , V = 0V 25 A - ABS Systems DSS DS DSS GS z DC/DC Converters and Off-Line UPS T = 150C 250 A J z Primary- Side Switch R V = 10V, I = 50A, Note 1 4.2 m DS(on) GS D z High Current Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS100074A(03/10) IXFA230N075T2 IXFP230N075T2 Symbol Test Conditions Characteristic Values TO-263 (IXFA) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 50 85 S fs DS D C 10.5 nF iss C V = 0V, V = 25V, f = 1MHz 1165 pF oss GS DS C 125 pF rss t 23 ns d(on) Resistive Switching Times t 18 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 33 ns R = 2 (External) d(off) G t 15 ns f Q 178 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 53 nC gs GS DS DSS D D25 Q 41 nC gd R 0.31 C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 230 A S GS I Repetitive, Pulse Width Limited by T 900 A SM JM TO-220 (IXFP) Outline V I = 100A, V = 0V, Note 1 1.3 V F GS SD t 59 ns rr I = 115A, V = 0V F GS I 3.6 A -di/dt = 100A/s RM V = 37V Q 106 nC R RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537