TM X-Class HiPerFET V = 850V IXFA20N85XHV DSS Power MOSFET I = 20A D25 R 330m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263HV Symbol Test Conditions Maximum Ratings G S V T = 25 C to 150 C 850 V DSS J V T = 25 C to 150 C, R = 1M 850 V D (Tab) DGR J GS V Continuous 30 V GSS V Transient 40 V G = Gate D = Drain GSM S = Source Tab = Drain I T = 25 C20A D25 C I T = 25 C, Pulse Width Limited by T 50 A DM C JM I T = 25 C10A A C E T = 25 C 800 mJ AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 540 W D C Features T -55 ... +150 C J T 150 C International Standard Package JM High Voltage Package T -55 ... +150 C stg Low R and Q DS(ON) G T Maximum Lead Temperature for Soldering 300 C L Avalanche Rated dT/dt Heating / Cooling rate, 175 C - 210 C 50 C/min Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 10..65 / 2.2..14.6 N/lb C Advantages Weight 2.5 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 1mA 850 V DSS GS D Power Supplies DC-DC Converters V V = V , I = 2.5mA 3.5 5.5 V GS(th) DS GS D PFC Circuits I V = 30V, V = 0V 100 nA GSS GS DS AC and DC Motor Drives Robotics and Servo Controls I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 1.5 mA J R V = 10V, I = 0.5 I , Note 1 330 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100897A(4/18) IXFA20N85XHV Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 6 10 S fs DS D D25 R Gate Input Resistance 0.8 Gi C 1660 pF iss C V = 0V, V = 25V, f = 1MHz 1730 pF oss GS DS C 24 pF rss Effective Output Capacitance C 67 pF Energy related V = 0V o(er) GS C 270 pV = 0.8 V F o(tr) Time related DS DSS t 20 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 44 ns d(off) R = 5 (External) G t 20 ns f Q 63 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 26 nC gd R 0.23 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 20 A S GS I Repetitive, pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 190 ns rr I = 20A, -di/dt = 100A/ s F Q 1.6 C RM V = 100V R I 16.5 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537