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X-On Electronics has gained recognition as a prominent supplier of C4D02120E Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. C4D02120E Schottky Diodes & Rectifiers are a product manufactured by Wolfspeed. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

C4D02120E Wolfspeed

C4D02120E electronic component of Wolfspeed
C4D02120E Wolfspeed
C4D02120E Schottky Diodes & Rectifiers
C4D02120E  Semiconductors

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See Product Specifications
Part No. C4D02120E
Manufacturer: Wolfspeed
Category: Schottky Diodes & Rectifiers
Description: Diode: Schottky rectifying; 1200V; 4.5A; TO252-2; Series: Z-Rec®
Datasheet: C4D02120E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.775 ea
Line Total: USD 1.78 
Availability - 35020
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
35020
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 1.775
10 : USD 1.536
75 : USD 1.0439
525 : USD 0.9724
1050 : USD 0.9724
2550 : USD 0.9724
5025 : USD 0.9713
10050 : USD 0.9438

851
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 3.024
10 : USD 2.702
11 : USD 1.638
30 : USD 1.554
1050 : USD 1.498

3419
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 26
Multiples : 1
26 : USD 2.5471
39 : USD 1.6859
44 : USD 1.471
100 : USD 1.4563
500 : USD 1.2185
1000 : USD 1.0691

258
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 25
Multiples : 1
25 : USD 2.5555
38 : USD 1.6896
44 : USD 1.4737
100 : USD 1.459
500 : USD 1.2205
1000 : USD 1.0706

5657
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 44
Multiples : 1
44 : USD 1.482
50 : USD 1.2935
100 : USD 1.2116
200 : USD 1.1557
500 : USD 1.0712
1000 : USD 0.9537
2000 : USD 0.9512
3600 : USD 0.95

   
Manufacturer
Product Category
Technology
Series
Diode Type
Off State Voltage Max
Load Current
Case
Mounting
Power
 
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We are delighted to provide the C4D02120E from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C4D02120E and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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C4D02120E V = 1200 V RRM Silicon Carbide Schottky Diode I (T =135C) = 5 A F C Z -Rec Rectifier Q = 11 nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F TO-252-2 Benefits Replace Bipolar with Unipolar Rectifiers PIN 1 Essentially No Switching Losses CASE Higher Efficiency PIN 2 Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) C4D02120E TO-252-2 C4D02120 Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages LED Lighting Power Supplies AC/DC Converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Blocking Voltage 1200 V DC 10 T =25C C I Maximum DC Current 5 A T =135C Fig. 3 F C 2 T =165C C 13 T =25C, t =10 ms, Half Sine pulse C P I Repetitive Peak Forward Surge Current A FRM 8.4 T =110C, t =10 ms, Half Sine pulse C P 19 T =25C, t =10 ms, Half Sine pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 16.5 T =110C, t =10 ms, Half Sine pulse C P 200 T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 160 T =110C, t =10 m s, Pulse C P 60 T =25C C P Power Dissipation W Fig. 4 tot 26 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-650V R 1.8 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 1.4 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 C4D02120E Rev. I, 01-2017Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.4 1.8 I = 2 A T =25C F J V Forward Voltage V Fig. 1 F 1.9 3 I = 2 A T =175C F J 10 50 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 40 150 V = 1200 V T =175C R J V = 800 V, I = 2A R F Q Total Capacitive Charge 11 nC di /dt = 200 A/ s Fig. 5 C T = 25C J 167 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 11 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 8 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 3.2 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 2.5 C/W Fig. 9 JC Typical Performance 600 4 T =-55C J 3.5 T = 25C J T = 75C 500 J T =125C J T =175C 3 J 400 2.5 2 300 T =-55C J T = 25C J 1.5 T = 75C J 200 T =125C J T =175C J 1 100 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 V (V) R V (V) F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D02120E Rev. I, 01-2017 I (A) F I (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Wolfspeed / Cree
Wolfspeed(CREE)
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