C4D15120D V = 1200 V RRM Silicon Carbide Schottky Diode ** I (T =135C) = 24 A C F Z -Rec Rectifier ** Q = 74 nC c Features Package 1.2-KVolt Schottky Rectifier Zero Reverse Recover y Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F Benefits TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices WithoutThermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C4D15120D TO-247-3 C4D15120 Free Wheeling Diodes in Inver ter stages AC/DC conver ters Maximum Ratings (T =25C unless other wise specified) C Symbol Parameter Value Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Blocking Voltage 1200 V DC 24.5/49 T =25C C Continuous For ward Current I 12/24 A T =135C Fig. 3 F C (Per Leg/Device) 7.5/15 T =157C C 38* T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak For ward Surge Current A FRM 25* T -110C, t =10 ms, Half Sine Pulse C P 66* T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Peak For ward Surge Current A Fig. 8 FSM 49.5* T =110C, t =10 ms, Half Sine Pulse C P 600* T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak For ward Current A Fig. 8 F,Max 480* T =110C, t =10 m s, Pulse C P 135/270 T =25C C P Power Dissipation(Per Leg/Device) W Fig. 4 tot 58.5/117 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 20.5* T =25C, t =10 ms 2 2 2 C P i dt i t value A s 12.25* T =110C, t =10 ms C P T , T Operating Junction and StorageTemper ature -55 to +135 C J stg 1 Nm M3 Screw TO-247 Mounting Torque 6-32 Screw 8.8 lbf-in * ** Per Leg, Per Device C4D15120D Rev. C, 05-2017 1Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 8 A T =25C F J V For ward Voltage V Fig. 1 F 2.2 3 I = 8 A T =175C F J 35 250 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 100 350 V = 1200 V T =175C R J V = 800 V, I = 8 A R F Q Total Capacitive Charge 37 nC di /dt = 200 A/s Fig. 5 C T = 25C J 560 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 37 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 27 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 10.5 J V = 800 V Fig. 7 C R Note:This is a majority carrier diode, so there is no reverse recover y charge. Thermal Characteristics Symbol Parameter Typ. Max. Unit Note * 1.11 R Thermal Resistance from Junction to Case C/W Fig. 9 ** JC 0.56 * ** Per Leg, Per Device Typical Performance 14 800 T =-55C J 700 T = 25C 12 J T = 75C J T =125C J T =175C 600 J 10 500 8 400 6 300 T =-55C J T = 25C J 4 T = 75C J 200 T =125C J T =175C J 2 100 0 0 0 500 1000 1500 2000 0 0.5 1 1.5 2 2.5 3 3.5 4 V (V) V (V) R F Figure 1. For ward Characteristics Figure 2. Reverse Characteristics C4D15120D Rev. C, 05-2017 2 I (A) F I (A) R