C4D40120D V = 1200 V RRM Silicon Carbide Schottky Diode ** I (T =135C) = 54A F C Z -Rec Rectifier ** Q = 198nC c Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C4D40120D TO-247-3 C4D40120 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Peak Reverse Voltage 1200 V R 56.5/113 T =25C C Continuous Forward Current I 27/54 A T =135C Fig. 3 F C (Per Leg/Device) 20/40 T =150C C 91* T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 61* T =110C, t =10 ms, Half Sine Pulse C P 130* T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Forward Surge Current A Fig. 8 FSM 110* T =110C, t =10 ms, Half Sine Pulse C P 1150* T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 950* T =110C, t =10 m s, Pulse C P 266/532 T =25C C P Power Dissipation (Per Leg/Device) W Fig. 4 tot 114/228 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 84.5* T =25C, t =10 ms 2 2 2 C P i dt i t value A s 60.5* T =110C, t =10 ms C P -55 to T Operating Junction Range C J +175 -55 to T Storage Temperature Range C stg +135 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw * ** Per Leg, Per Device 1 C4D40120D Rev. G, 09-2016Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 20 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 3 I = 20 A T =175C F J 35 200 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 65 400 V = 1200 V T =175C R J V = 800 V, I = 20A R F Q Total Capacitive Charge 99 nC di /dt = 200 A/s Fig. 5 C T = 25C J 1500 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 93 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 67 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 28 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note 0.29** R Thermal Resistance from Junction to Case C/W Fig. 9 JC 0.57* * ** Per Leg, Per Device Typical Performance (Per Leg) 40 1 T =-55C J 0.9 35 T = 25C J T = 75C J T =125C 0.8 J T =175C 30 J 0.7 25 0.6 20 0.5 0.4 15 T =-55C J 0.3 T = 25C J 10 T = 75C J T =125C 0.2 J T =175C J 5 0.1 0 0 0 1 2 3 4 0 500 1000 1500 V (V) V (V) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D40120D Rev. G, 09-2016 I (A) F I (mA) R