V 1.2 kV CAS120M12BM2 DS 1.2kV, 13 m All-Silicon Carbide E 2.1 mJ sw, Total 120A, 150 C Half-Bridge Module R 13 m DS(on) C2M MOSFET and Z-Rec Diode Features Package 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications Part Number Package Marking Induction Heating Solar and Wind Inverters CAS120M12BM2 Half-Bridge Module CAS120M12BM2 DC/DC Converters Line Regen Drives Battery Chargers Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Notes V Drain - Source Voltage 1.2 kV DSmax V Gate - Source Voltage -10/+25 V Absolute maximum values GSmax V Gate - Source Voltage -5/20 V Recommended operational values GSop 193 VGS = 20 V, T = 25 C C I Continuous MOSFET Drain Current A Fig. 26 D 138 VGS = 20 V, T = 90 C C I Pulsed Drain Current 480 A Pulse width tp limited by T D(pulse) J(max) 305 VGS = -5 V, T = 25 C C I Continuous Diode Forward Current A F 195 V = -5 V, T = 90 C GS C T Junction Temperature -40 to +150 C Jmax T ,T Case and Storage Temperature Range -40 to +125 C C STG V Case Isolation Voltage 5 kV AC, 50 Hz , 1 min isol L Stray Inductance 15 nH Measured between terminals 2 and 3 Stray P Power Dissipation 925 W T = 25 C, T = 150 C Fig. 25 C J D Subject to change without notice. 1 www.cree.com Datasheet: CAS120M12BM2,Rev. -Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain - Source Breakdown Voltage 1.2 kV V = 0 V, I = 300 A (BR)DSS GS, D V Gate Threshold Voltage 1.8 2.6 V V = 10 V I = 6 mA Fig. 7 GS(th) DS , D 80 300 A V = 1.2 kV, V = 0V DS GS I Zero Gate Voltage Drain Current DSS 400 1500 V = 1.2 kV,V = 0V, T = 150 C DS GS J I Gate-Source Leakage Current 1 100 nA V = 20 V, V = 0V GSS DS GS 13 16 V = 20 V, I = 120 A GS DS Fig. 4, R DS(on) On State Resistance m V = 20 V, I = 120 A, GS DS 5, 6 23 30 T = 150 C J 53.8 V = 20 V I = 120 A DS , DS g fs Transconductance S Fig. 8 48.5 VDS = 20 V, ID = 120 A, TJ = 150 C C iss Input Capacitance 6.3 f = 200 kHz, VDS = 1 kV, Fig. C oss Output Capacitance 0.88 nF V = 25 mV 16, 17 AC C Reverse Transfer Capacitance 0.037 rss V = 600 V, V = -5V/+20V E DD GS on Turn-On Switching Energy 1.7 mJ I = 120 A, R = 2.5 D G(ext) Fig. 22 Load = 142 H, TJ = 150 C E Turn-Off Switching Energy Off 0.4 mJ Note: IEC 60747-8-4 Definitions R Internal Gate Resistance 1.8 f = 200 kHz, V = 25 mV AC G (int) Q Gate-Source Charge 97 GS V = 800 V, V = -5V/+20V, DD GS Q Gate-Drain Charge 118 nC Fig. 15 GD I = 120 A, Per JEDEC24 pg 27 D QG Total Gate Charge 378 t Turn-on delay time 38 ns V = 600V, V = -5/+20V, d(on) DD GS I = 120 A, R = 2.5 , D G(ext) t Rise Time 34 ns r Timing relative to V Fig. 24 DS t d(off ) Turn-off delay time 70 ns Note: IEC 60747-8-4, pg 83 Inductive load t Fall Time 22 ns f 1.5 1.8 I = 120 A, V = 0 Fig. 10 F GS V Diode Forward Voltage V SD 1.9 2.4 IF = 120 A, TJ = 150 C, V = 0 Fig. 11 GS I = 120A, V = 600 V, T = SD DS J Q C Total Capacitive Charge 1.1 C 25C, di /dt = 3 kA/s, V = -5 V SD GS Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R Thermal Resistance Juction-to-Case for MOSFET 0.125 0.135 Fig. 27 thJCM C/W R Thermal Resistance Juction-to-Case for Diode 0.108 0.115 Fig. 28 thJCD Additional Module Data Symbol Parameter Max. Unit Test Condtion W Weight 290 g M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal 30 mm Terminal to terminal Creepage Distance 40 mm Terminal to baseplate CAS120M12BM2,Rev. - 2