X-On Electronics has gained recognition as a prominent supplier of CG2H80030D-GP4 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CG2H80030D-GP4 RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CG2H80030D-GP4 Wolfspeed

CG2H80030D-GP4 electronic component of Wolfspeed
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Part No.CG2H80030D-GP4
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
Datasheet: CG2H80030D-GP4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 117.458 ea
Line Total: USD 1174.58 
Availability - 38
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
38
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 10
Multiples : 10
10 : USD 117.458
30 : USD 116.424
50 : USD 115.335
100 : USD 115.335
250 : USD 110.891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Product Type
Rds On - Drain-Source Resistance
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CG2H80030D-GP4 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CG2H80030D-GP4 and other electronic components in the RF JFET Transistors category and beyond.

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PN: CGH80030D CGH80030D 30 W, 8.0 GHz, GaN HEMT Die Crees CGH80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on Crees 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES APPLICATIONS 17 dB Typical Small Signal Gain at 4 GHz 2-Way Private Radio 12 dB Typical Small Signal Gain at 8 GHz Broadband Amplifiers 30 W Typical P Cellular Infrastructure SAT 28 V Operation Test Instrumentation High Breakdown Voltage Class A, AB, Linear amplifiers suitable for High Temperature Operation OFDM, W-CDMA, EDGE, CDMA waveforms Up to 8 GHz Operation High Efficiency Packaging Information Bare die are shipped in Gel-Pak containers. Non-adhesive tacky membrane immobilizes die during shipment. Subject to change without notice. 1 www.cree.com/RF Rev 0.1 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 VDC 25C DSS Gate-source Voltage V -10, +2 VDC 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 7.0 mA 25C GMAX 1 Maximum Drain Current I 3.0 A 25C DMAX 2 Thermal Resistance, Junction to Case (packaged) R 4.9 C/W 85C, 28.8W Dissipation JC Thermal Resistance, Junction to Case (die only) R 2.74 C/W 85C, 28.8W Dissipation JC Mounting Temperature (30 seconds) T 320 C 30 seconds S 1 Note Current limit for long term, reliable operation 2 Note Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier. Electrical Characteristics (Frequency = 4 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V -3.6 -3.0 2.4 V V = 10 V, I = 7.2 mA GS(TH) DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 200 mA GS(Q) DC DD DQ Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BD GS D On Resistance R 0.26 0.33 0.41 V = 0.1 V ON DS RF Characteristics Small Signal Gain G 16.5 dB V = 28 V, I = 200 mA SS DD DQ 1 Saturated Power Output P 30 W V = 28 V, I = 200 mA SAT DD DQ 2 Drain Efficiency 65 % V = 28 V, I = 200 mA, P = 30 W DD DQ SAT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 200 mA, DD DQ P = 30 W CW OUT Dynamic Characteristics Input Capacitance C 7.3 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.2 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.37 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 P is defined as I = 0.7 mA. SAT G 2 Drain Efficiency = P / P . OUT DC Cree, Inc. Copyright 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/RF 2 CGH80030D Rev 0.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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