T2G6003028-FL 30 W, 28V DC 6 GHz, GaN RF Power Transistor Product Overview The Qorvo T2G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with Qorvos proven QGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. 1 Key Features Frequency: DC to 6 GHz Output Power (P ): 42.7 W 3dB Functional Block Diagram Linear Gain: >14 dB Operating Voltage: 28 V Low thermal resistance package Pulse capable Note 1: 3 Ghz Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Pin Configuration Pin No. Label Ordering info 1 VD / RF OUT 2 V / RF IN G Part No. Description Flange Source Packaged part T2G6003028-FL Flanged 5.4 5.9 GHz T2G6003028-FSEVB Evaluation Board T2G6003028-FSEVB2 1.3 1.9 GHz Evaluation Board Datasheet Rev. C, May 2021 Subject to change without notice - 1 of 21- www.qorvo.com T2G6003028-FL 30 W, 28V DC 6 GHz, GaN RF Power Transistor 1, 2 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Drain Voltage Range, V 12 40 V Breakdown Voltage, BV 100 V D DG Drain Bias Current, IDQ 200 mA Gate Voltage Range, VG -7 to +2 V Drain Current, IDMAX 5.5 A Gate Voltage, VG 3.0 V Gate Current Range, I -10 to 28 mA G Power Dissipation, Pulsed, 47.5 W P DISS RF Input Power, CW, 40 dBm T = 25C (P ) IN Channel Temperature (TCH) 275 C Mounting Temperature 320 C (30Seconds) Storage Temperature 40 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. 1, 2 Electrical Specifications Parameter Min Typ Max Units Linear Gain, G 12 14 dB LIN Output Power at 3dB compression point, P3dB 43.0 44.6 W Drain Efficiency at 3dB compression point, DEFF3dB 45.0 54.0 % Gain at 3dB compression point, G3dB 9.0 11.0 dB Gate Leakage (VD = +10 V, VG = 3.7 V) -11 mA Notes: 1. Performance at 5.6 GHz in the 5.4 to 5.9 GHz Evaluation Board 2. VDS = 28 V, IDQ = 200 mA Pulse: 100s, 20% 1 RF Characterization Mismatch Ruggedness at 5.6 GHz Symbol Parameter dB Compression Typical VSWR Impedance Mismatch Ruggedness 3 10:1 Notes: 1. P1dB CW Input Power under matched condition. Datasheet Rev. C, May 2021 Subject to change without notice - 2 of 21- www.qorvo.com