TAT7469 CATV 75 pHEMT Dual RF Amplifier Applications Edge QAM Gain Stage MDU Output RF Distribution Amplifiers Low Noise Optical TIA SOIC-8 Package Product Features Functional Block Diagram Pin 1 Reference Mark 75 , 50 MHz to 1200 MHz Bandwidth RF Low Noise Figure: 3.2 dB to 1000 MHz RF / V A 1 8 RF / V A IN G OUT DD Configurable as an Optical low noise TIA A EIN typ 3.5 pA/Hz N/C 2 7 N/C Optical S21Typ 20dB Z/75 dB N/C N/C 3 6 Adjustable Low Power Consumption B pHEMT device technology RF / V B RF / V B 4 5 IN G OUT DD SOIC-8 package Backside Pad - RF/DC GND General Description Pin Configuration The TAT7469 is a 75 RF Amplifier designed for CATV Pin No. Label use, but capable of operation up to 1200 MHz. The 1 RF /V A IN G TAT7469 contains two separate amplifiers for push pull 2, 3, 6, 7 N/C applications. It is fabricated using 6-inch GaAs pHEMT 4 RF /V B IN G technology to optimize performance and cost. Each 5 RF /V B OUT DD amplifier contains on-chip active biasing. The bias 8 RF /V A current set point of each amplifier is adjustable with a OUT DD single resistor from the input to ground. Backside Pad RF/DC GND Ordering Information Part No. Description TAT7469 75 Dual pHEMT Amplifier TAT7469-SC8-EB 50-1200 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7 reel. Datasheet: Rev I 6-11-14 - 1 of 11- Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com TAT7469 CATV 75 pHEMT Dual RF Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C Device Voltage (V ) 5.0 V DD Device Voltage (V ) +10 V Device Voltage (I ) 250 mA DD DD () Device Current (I ) 400 mA Case Temperature 40 +85 C DD 6 Operation of this device outside the parameter ranges given Tj for >10 hours MTTF +145 C above may cause permanent damage. Electrical specifications are measured at specified test Total current of both amplifiers, individual side cannot conditions. Specifications are not guaranteed over all exceed half this value as an independent amplifier recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: TAT7469-SC8-EB Evaluation board, V =+5 V, Heatsink Temp= +25C, Zo = 75 , BIAS (J2) pin to GND DD Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1200 MHz Gain 50 To 1200 MHz 17.0 17.5 dB (1) Gain Flatness 50 To 1000 MHz 0.75 dB 50 To 1000 MHz 18 dB Input Return Loss >1000 To 1200 MHz 17 50 To 1000 MHz 23 dB Output Return Loss >1000 To 1200 MHz 17 (3) Output IP2 +70 +77 dBm Pout = +10 dBm/tone f1=225 MHz, f2=325 MHz 184 mA < I < 315 mA DD Output IP3 +37 +38 dBm Noise Figure Freq.=1000 MHz 3.2 dB (2) Device Current (I ) 184 250 315 mA DD Thermal Resistance, Junction to base 13 C/W jb Notes: 1. Flatness determined by deviation from a straight-line curve fit. 2. R3 and R4 are used to set the bias current, 10 k. 3. Low side intermod at 200 MHz. Datasheet: Rev I 6-11-14 - 2 of 11- Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com