TGA2237-SM 0.032.5 GHz 10 W GaN Power Amplifier Product Overview Qorvos TGA2237-SM is a wideband distributed amplifier fabricated on Qorvos production 0.25 um GaN on SiC process. The TGA2237-SM operates from 0.032.5 GHz and provides greater than 10 W of saturated output power with greater than 13 dB of large signal gain and greater than 50% power-added efficiency. The TGA2237-SM is available in a low-cost, surface mount 32 lead 5 x 5 AIN QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237-SM is fully matched to 50 at both RF ports allowing for simple system integration. DC blocks are required on both Key Features RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Frequency Range: 0.032.5 GHz P : >40 dBm at P = 27 dBm SAT IN Lead-free and RoHS compliant. P1 dB: >33 dBm PAE: >50% Large Signal Gain: >13 dB Small Signal Gain: >19 dB Input Return Loss: >10 dB Output Return Loss: >12 dB Bias: V = 32 V, I = 360 mA D DQ Functional Block Diagram Wideband Flat Power 32 31 30 29 28 27 26 25 Package Dimensions: 5.0 x 5.0 x 1.45 mm 1 24 Applications 2 23 Commercial and Military Radar Communications 3 22 Electronic Warfare 4 21 RF IN 5 20 RF OUT Ordering Information 6 19 Part No. Description 7 18 0.032.5 GHz 10 W GaN Power TGA2237-SM Amplifier 8 17 TGA2237-SM EVB Evaluation Board 9 10 11 12 13 14 15 16 Data Sheet Rev. D, August 2020 Subject to change without notice 1 of 19 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential TGA2237-SM 0.032.5 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 32 V Gate Voltage Range (VG) -8 to 0 V Drain Current (IDQ) 360 mA Drain Current (I ) 1.2 A D Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Gate Current (IG) -2.4 to 8.4 mA recommended operating conditions. Power Dissipation (PDISS), 85 C 19 W (*) Operational input power must be limited to 26 dBm when (*) Input Power (P ), CW, 50 , 85 C 33 dBm IN operating below 0.6 GHz to prevent excessive forward gate current. Input Power (PIN), CW, VSWR 3:1, (*) 33 dBm VD = 32V, 85 C Max VSWR, CW, P = 27 dBm, IN 10:1 VD = 32 V, 85 C (Load) Mounting Temperature (30 Seconds) 260 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied Data Sheet Rev. D, August 2020 Subject to change without notice 1 of 19 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential