TGA2533-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram 24 23 22 21 20 19 Frequency Range: 12.5 15.5 GHz TOI: 43dBm 18 1 Power: 34.5 dBm Psat, 33 dBm P1dB 2 17 Gain: 27 dB Return Loss: 13 dB 16 3 NF: 6 dB 4 15 Integrated Power Detector 14 5 Bias: Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical 6 13 Package Dimensions: 5.0 x 5.0 x 0.85 mm 10 11 7 8 9 12 General Description Pin Configuration The TriQuint TGA2533-SM is a Ku-Band Packaged Pin Symbol Power Amplifier. The TGA2533-SM operates from 12.5 1, 2, 3, 5, 6, 9, 12, 13, 14, N/C to 15.5 GHz and is designed using TriQuints power 15, 17 pHEMT production process. 4 RF IN 7, 8, 23, 24 Vg The TGA2533-SM typically provides 43dBm of TOI at 16 RF OUT 20dBm Pout/Tone, 33 dBm of output power at 1dB gain 10, 11, 20, 21 Vd compression, and the small signal gain is 27 dB. 18 Vref 19 Vdet The TGA2533-SM is available in a low-cost, surface 22 GND mount 24 lead 5x5 QFN package and is ideally suited for Point-to-Point Radio, and Ku-Band VSAT Ground Terminal. Lead-free and RoHS compliant. Ordering Information Evaluation Boards are available upon request. Part No. ECCN Description TGA2533-SM Ku-band Power EAR99 TGA2533-XCC-500-SM Amplifier TGA2533-SM T/R size = 1000 pieces on a 7 reel. TGA2533-XCC-500-SM T/R size = 500 pieces on a 7 reel. - 1 of 13 - Data Sheet: Rev G 02/22/16 Disclaimer: Subject to change without notice 2016 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA2533-SM Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typical Max Units Drain Voltage,Vd +8 V Vd 6 7.5 V Gate Voltage,Vg -3 to 0 V Id 1.3 A Drain Current, Id 2.24 A Id drive (Under RF 1.7 A Drive) Gate Current, Ig -11 to 90 mA Power Dissipation, Pdiss 17.9 W Vg -0.55 V RF Input Power, CW, 50,T = 25C 27 dBm o Electrical specifications are measured at specified test conditions. Channel Temperature, Tch 200 C o Specifications are not guaranteed over all recommended operating Mounting Temperature (30 Seconds) 260 C conditions. o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical. Parameter Min Typical Max Units Operational Frequency Range 12.5 15.5 GHz Gain 12.7 13.3 GHz 24 27 dB 14.4 15.4 GHz 25 27 dB Input Return Loss 13 dB Output Return Loss 13 dB Output Power Saturation 34.5 dBm Output Power 1 dB Gain Compression 12.7 13.3 GHz 32 33 dBm 14.4 15.4 GHz 31 33 dBm Output TOI Pout/Tone = 20 dBm 12.7 13.3 GHz 39.5 43 dBm 14.4 15.4 GHz 39.5 43 dBm Noise Figure 7 dB -0.033 dB/C Gain Temperature Coefficient Power Temperature Coefficient -0.005 dBm/C - 2 of 13 - Data Sheet: Rev G 02/22/16 Disclaimer: Subject to change without notice 2016 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network