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X-On Electronics has gained recognition as a prominent supplier of TGA2595 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2595 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2595 Qorvo

TGA2595 electronic component of Qorvo
TGA2595 Qorvo
TGA2595 RF Amplifier
TGA2595  Semiconductors

Images are for reference only
See Product Specifications
Part No. TGA2595
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 27-5-31GHz GaN 9W Gain 23dB PAE 24%
Datasheet: TGA2595 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 498.9292 ea
Line Total: USD 4989.29 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Mon. 06 Jan to Wed. 08 Jan
MOQ : 10
Multiples : 10
10 : USD 498.9292
30 : USD 479.7335

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Product
Brand
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Supply Voltage - Max
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA2595 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2595 and other electronic components in the RF Amplifier category and beyond.

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TGA2595 27.531GHz 9W GaN Power Amplifier Product Description Qorvos TGA2595 is a balanced Ka-band power amplifier fabricated on Qorvos 0.15um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non-ideal loads. Operating from 27.5 to 31GHz, it achieves 9W saturated output power, power-added efficiency of 22% and 30dB small signal gain. Along with excellent linear characteristics, the TGA2595 is ideally suited to support both commercial and defense related satellite communications. Product Features To simplify system integration, the TGA2595 is fully Product Features matched to 50 with integrated DC blocking caps on both Frequency Range: 27.5 to 31GHz Part No. Description I/O ports. P : 39dBm (P = 22dBm), CW TGAOUT2595 27.5IN 31GHz 9W GaN Power Amplifier PAE: 22% (P = 22dBm), CW INSamples (2 pcs. pack) The TGA2595 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Small Signal Gain: 30dB Evaluation Board for TGA2595 Return Loss: 20dB Lead-free and RoHS compliant. IM3 33dBm/tone: 30dBc IM5 33dBm/tone: 35dBc Bias: VD = +20V, IDQ = 280-560mA, VG 2.5V Typical Chip Dimensions: 3.60 x 3.24 x 0.10mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Satellite Communications 2 3 4 5 6 1 7 Ordering Information Part No. Description 12 11 10 9 8 TGA2595 27.531GHz 9W GaN Power Amplifier TGA2595EVB Evaluation Board for TGA2595 Data Sheet Rev. C, May 2021 - 1 of 13 - www.qorvo.com TGA2595 27.531GHz 9W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ Max Units Drain Voltage (V ) 29.5 Drain Voltage (V ) +20 V D D Gate Voltage Range (V ) 5 to 0 V Drain Current, Quiescent (I ) 280-560 mA G DQ Drain Current (I ) 2.8 A Drain Current, RF (I ) See charts page 6 mA D D Drive Gate Current (I ) See chart Gate Voltage Typ. Range (V ) 2 to 3 V G G Power Dissipation (P ), CW, 85C 44 W Operating Temp. Range 40 +25 +85 C DISS Electrical specifications are measured at specified test Input Power (P ), CW, 50 , IN 30 dBm conditions. Specifications are not guaranteed over all VD=22 V, IDQ=280 mA, 85 C recommended operating conditions. Input Power (PIN), CW, 10:1 VSWR, 25 dBm V =22 V , I =280 mA, 25 C D DQ Gate Current Maximum vs. T vs. Stage CH 140 Channel Temperature (TCH) 275 C Total Mounting Temperature (30 seconds) 320 C Stage 3 120 Stage 2 Storage Temperature 40 to 150 C 100 Stage 1 Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings 80 only, and functional operation of the device at these conditions is not implied. 60 40 20 0 125 135 145 155 165 175 185 195 205 215 225 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 27.5 31 GHz Output Power at Saturation, PSAT PIN = +22 dBm 37 39 dBm Power Added Efficiency, PAE PIN = +22 dBm 22 % Small Signal Gain, S21 24 30 dB Input Return Loss, IRL 20 dB Output Return Loss, ORL 20 dB RD 3 Intermodulation Products, IM3 POUT/TONE = +33 dBm, IDQ = 325 mA 30 dBc th 5 Intermodulation Products, IM5 POUT/TONE = +33 dBm, IDQ = 325 mA 35 dBc PSAT Temperature Coefficient TDIFF = +25C to +85C PIN = +22 dBm 0.01 dBm/C S21 Temperature Coefficient TDIFF = 40C to +85C 0.09 dB/C Notes: 1. Test conditions unless otherwise noted: CW, VD = +20 V, IDQ = 560 mA, VG = -2.5 V +/- 0.5 V typical , TBASE=+25C, Z0=50 2. T is back side of carrier plate BASE Data Sheet Rev. C, May 2021 - 2 of 13 - www.qorvo.com I Maximum (mA) G

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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