TGA2595 27.531GHz 9W GaN Power Amplifier Product Description Qorvos TGA2595 is a balanced Ka-band power amplifier fabricated on Qorvos 0.15um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non-ideal loads. Operating from 27.5 to 31GHz, it achieves 9W saturated output power, power-added efficiency of 22% and 30dB small signal gain. Along with excellent linear characteristics, the TGA2595 is ideally suited to support both commercial and defense related satellite communications. Product Features To simplify system integration, the TGA2595 is fully Product Features matched to 50 with integrated DC blocking caps on both Frequency Range: 27.5 to 31GHz Part No. Description I/O ports. P : 39dBm (P = 22dBm), CW TGAOUT2595 27.5IN 31GHz 9W GaN Power Amplifier PAE: 22% (P = 22dBm), CW INSamples (2 pcs. pack) The TGA2595 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Small Signal Gain: 30dB Evaluation Board for TGA2595 Return Loss: 20dB Lead-free and RoHS compliant. IM3 33dBm/tone: 30dBc IM5 33dBm/tone: 35dBc Bias: VD = +20V, IDQ = 280-560mA, VG 2.5V Typical Chip Dimensions: 3.60 x 3.24 x 0.10mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Satellite Communications 2 3 4 5 6 1 7 Ordering Information Part No. Description 12 11 10 9 8 TGA2595 27.531GHz 9W GaN Power Amplifier TGA2595EVB Evaluation Board for TGA2595 Data Sheet Rev. C, May 2021 - 1 of 13 - www.qorvo.com TGA2595 27.531GHz 9W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ Max Units Drain Voltage (V ) 29.5 Drain Voltage (V ) +20 V D D Gate Voltage Range (V ) 5 to 0 V Drain Current, Quiescent (I ) 280-560 mA G DQ Drain Current (I ) 2.8 A Drain Current, RF (I ) See charts page 6 mA D D Drive Gate Current (I ) See chart Gate Voltage Typ. Range (V ) 2 to 3 V G G Power Dissipation (P ), CW, 85C 44 W Operating Temp. Range 40 +25 +85 C DISS Electrical specifications are measured at specified test Input Power (P ), CW, 50 , IN 30 dBm conditions. Specifications are not guaranteed over all VD=22 V, IDQ=280 mA, 85 C recommended operating conditions. Input Power (PIN), CW, 10:1 VSWR, 25 dBm V =22 V , I =280 mA, 25 C D DQ Gate Current Maximum vs. T vs. Stage CH 140 Channel Temperature (TCH) 275 C Total Mounting Temperature (30 seconds) 320 C Stage 3 120 Stage 2 Storage Temperature 40 to 150 C 100 Stage 1 Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings 80 only, and functional operation of the device at these conditions is not implied. 60 40 20 0 125 135 145 155 165 175 185 195 205 215 225 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 27.5 31 GHz Output Power at Saturation, PSAT PIN = +22 dBm 37 39 dBm Power Added Efficiency, PAE PIN = +22 dBm 22 % Small Signal Gain, S21 24 30 dB Input Return Loss, IRL 20 dB Output Return Loss, ORL 20 dB RD 3 Intermodulation Products, IM3 POUT/TONE = +33 dBm, IDQ = 325 mA 30 dBc th 5 Intermodulation Products, IM5 POUT/TONE = +33 dBm, IDQ = 325 mA 35 dBc PSAT Temperature Coefficient TDIFF = +25C to +85C PIN = +22 dBm 0.01 dBm/C S21 Temperature Coefficient TDIFF = 40C to +85C 0.09 dB/C Notes: 1. Test conditions unless otherwise noted: CW, VD = +20 V, IDQ = 560 mA, VG = -2.5 V +/- 0.5 V typical , TBASE=+25C, Z0=50 2. T is back side of carrier plate BASE Data Sheet Rev. C, May 2021 - 2 of 13 - www.qorvo.com I Maximum (mA) G