X-On Electronics has gained recognition as a prominent supplier of TGA2624-SM RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2624-SM RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2624-SM Qorvo

TGA2624-SM electronic component of Qorvo
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Part No.TGA2624-SM
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 9-10GHz 20W GaN PAE>40% SSG >34dB
Datasheet: TGA2624-SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA2624-SM from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2624-SM and other electronic components in the RF Amplifier category and beyond.

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TGA2624-SM 910 GHz 20 W GaN Power Amplifier General Description Qorvos TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvos production 0.25 um GaN on SiC process. Operating from 9-10 GHz, the TGA2624-SM typically generates 20 W of saturated output power with a power-added efficiency greater than 40% and 25 dB of large signal gain. The TGA2624-SM is packaged in a 7 x 7 mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system Product Features integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain Frequency Range: 910 GHz performance that can save costs on existing platforms PSAT: 43 dBm PIN = 18 dBm while enabling the development of future systems. PAE: >40% PIN = 18 dBm Power Gain: 25 dB PIN = 18 dBm Lead-free and RoHS compliant. Bias: VD = 28 V, IDQ = 365 mA (Pulsed VD: PW = 100 us and DC = 10 %) Evaluation boards are available upon request. Package Dimensions: 7 x 7 x 1.75 mm Applications Functional Block Diagram Weather and Marine Radar 1 14 2 13 3 12 Ordering Information Part Description TGA2624-SM 910 GHz 20 W GaN Power Amplifier TGA2624-SM EVB Evaluation Board Data Sheet Rev D, July 2020 Subject to change without notice 1 of 18 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential 4 22 5 21 6 20 7 19 8 18 9 17 10 16 11 15 TGA2624-SM 910 GHz 20 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD): Pulsed 28 V Gate Voltage Range (VG) -8 to 0 V Drain Current (IDQ) 365 mA Drain Current (ID) 3.8 A Gate Voltage Range (VG) 2.8 to 2.0 V Gate Current (IG) See plot page 3 Temperature (TBASE) -40 to 85 C Power Dissipation (P ), 85 C, CW 44 W DISS Electrical specifications are measured at specified test Input Power (P ), CW, 50 , IN conditions. Specifications are not guaranteed over all 25 dBm VD = 28 V, 85 C recommended operating conditions. Input Power (PIN), CW, VSWR 6:1, 19 dBm VD = 28 V, 85 C Mounting Temperature (30 seconds) 260 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 28 V, I = 365 mA, Pulsed V PW = 100 us, DC = 10 % D DQ D: Parameter Min Typical Max Units Operational Frequency Range 9 10 GHz Small Signal Gain >34 dB Input Return Loss >9 dB Output Return Loss >8.5 dB Output Power (P = 18 dBm) 42 43 dBm IN Power Added Efficiency (P = 18 dBm) 30 >40 % IN Power Gain (P = 18 dBm) 25 dB IN Output Power Temperature Coefficient -0.02 dBm/C From 25 C to 85 C (PIN = 18 dBm) Recommended Operating Voltage: 20 28 32 V Gate Leakage (VD = 10 V, VG = 3.7 V) 8.3 mA Data Sheet Rev D, July 2020 Subject to change without notice 2 of 18 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential

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