TGA2624-SM 910 GHz 20 W GaN Power Amplifier General Description Qorvos TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvos production 0.25 um GaN on SiC process. Operating from 9-10 GHz, the TGA2624-SM typically generates 20 W of saturated output power with a power-added efficiency greater than 40% and 25 dB of large signal gain. The TGA2624-SM is packaged in a 7 x 7 mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system Product Features integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain Frequency Range: 910 GHz performance that can save costs on existing platforms PSAT: 43 dBm PIN = 18 dBm while enabling the development of future systems. PAE: >40% PIN = 18 dBm Power Gain: 25 dB PIN = 18 dBm Lead-free and RoHS compliant. Bias: VD = 28 V, IDQ = 365 mA (Pulsed VD: PW = 100 us and DC = 10 %) Evaluation boards are available upon request. Package Dimensions: 7 x 7 x 1.75 mm Applications Functional Block Diagram Weather and Marine Radar 1 14 2 13 3 12 Ordering Information Part Description TGA2624-SM 910 GHz 20 W GaN Power Amplifier TGA2624-SM EVB Evaluation Board Data Sheet Rev D, July 2020 Subject to change without notice 1 of 18 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential 4 22 5 21 6 20 7 19 8 18 9 17 10 16 11 15 TGA2624-SM 910 GHz 20 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD): Pulsed 28 V Gate Voltage Range (VG) -8 to 0 V Drain Current (IDQ) 365 mA Drain Current (ID) 3.8 A Gate Voltage Range (VG) 2.8 to 2.0 V Gate Current (IG) See plot page 3 Temperature (TBASE) -40 to 85 C Power Dissipation (P ), 85 C, CW 44 W DISS Electrical specifications are measured at specified test Input Power (P ), CW, 50 , IN conditions. Specifications are not guaranteed over all 25 dBm VD = 28 V, 85 C recommended operating conditions. Input Power (PIN), CW, VSWR 6:1, 19 dBm VD = 28 V, 85 C Mounting Temperature (30 seconds) 260 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 28 V, I = 365 mA, Pulsed V PW = 100 us, DC = 10 % D DQ D: Parameter Min Typical Max Units Operational Frequency Range 9 10 GHz Small Signal Gain >34 dB Input Return Loss >9 dB Output Return Loss >8.5 dB Output Power (P = 18 dBm) 42 43 dBm IN Power Added Efficiency (P = 18 dBm) 30 >40 % IN Power Gain (P = 18 dBm) 25 dB IN Output Power Temperature Coefficient -0.02 dBm/C From 25 C to 85 C (PIN = 18 dBm) Recommended Operating Voltage: 20 28 32 V Gate Leakage (VD = 10 V, VG = 3.7 V) 8.3 mA Data Sheet Rev D, July 2020 Subject to change without notice 2 of 18 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential