X-On Electronics has gained recognition as a prominent supplier of TGA2814-CP RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2814-CP RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2814-CP Qorvo

TGA2814-CP electronic component of Qorvo
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See Product Specifications
Part No.TGA2814-CP
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 3.1-3.6GHz 80W GaN Pout 49dBm PAE 50%
Datasheet: TGA2814-CP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 810.1194 ea
Line Total: USD 8101.19 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 10
Multiples : 10
10 : USD 810.1194

   
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Product Category
RoHS - XON
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Technology
Operating Frequency
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
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We are delighted to provide the TGA2814-CP from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2814-CP and other electronic components in the RF Amplifier category and beyond.

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TGA2814-CP 3.1 3.6 GHz 80 W GaN Power Amplifier Product Description Qorvos TGA2814-CP is a packaged high-power S-Band amplifier fabricated on Qorvos QGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50 %, and power gain of 23 dB. The TGA2814-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2814-CP is ideally suited for both commercial and defense applications. Product Features Frequency Range: 3.13.6 GHz POUT: 49 dBm PIN = 27 dBm PAE: 50% P = 27 dBm IN Power Gain: 23 dB PIN = 27 dBm Bias: VD = +30V, IDQ = 200mA, VG = 3V typical, Pulsed (PW = 15 ms, DC = 30 %) Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details Applications Radar Ordering Information Part No. Description TGA2814-CP 3.1 3.6 GHz 80 W GaN Power Amplifier 1113464 TGA2814-CP Evaluation Board - 1 of 13 - Data Sheet Rev. A, March 21, 2019 www.qorvo.com TGA2814-CP 3.1 3.6 GHz 80 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ. Max Units Drain Voltage (VD) 40V Drain Voltage (V ) pulsed: D +30 V Gate Voltage Range (V ) 8 to 0V PW = 15 ms, DC = 30 % G Drain Current (I ) 10.4A D Drain Current, (I ) 200 mA DQ Gate Current (I ) See plot page 8 G Gate Voltage (V ) -3 Typical V G Power Dissipation (P ), 85C 112W DISS T Range 40 +85 C BASE Input Power (P ), 50, 85C, CW 33dBm IN Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Input Power (P ), 85C, VSWR 3:1, IN 30 dBm recommended operating conditions. VD = 30V, CW Lead Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 3.1 3.6 GHz Input Return Loss >15 dB Output Return Loss >5 dB Output Power ( PIN = 27dBm) 49 dBm Power Added Efficiency ( PIN = 27dBm) 50 % Power Gain (at P = 27 dBm) 23 dB IN Output Power Temperature Coefficient -0.005 dBm/C Test conditions unless otherwise noted: 25C, V = +30V (PW = 15 ms, DC = 30 %), I = 200mA, V = 3V typical. D DQ G - 2 of 13 - Data Sheet Rev. A, March 21, 2019 www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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