TGA2814-CP 3.1 3.6 GHz 80 W GaN Power Amplifier Product Description Qorvos TGA2814-CP is a packaged high-power S-Band amplifier fabricated on Qorvos QGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50 %, and power gain of 23 dB. The TGA2814-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2814-CP is ideally suited for both commercial and defense applications. Product Features Frequency Range: 3.13.6 GHz POUT: 49 dBm PIN = 27 dBm PAE: 50% P = 27 dBm IN Power Gain: 23 dB PIN = 27 dBm Bias: VD = +30V, IDQ = 200mA, VG = 3V typical, Pulsed (PW = 15 ms, DC = 30 %) Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details Applications Radar Ordering Information Part No. Description TGA2814-CP 3.1 3.6 GHz 80 W GaN Power Amplifier 1113464 TGA2814-CP Evaluation Board - 1 of 13 - Data Sheet Rev. A, March 21, 2019 www.qorvo.com TGA2814-CP 3.1 3.6 GHz 80 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ. Max Units Drain Voltage (VD) 40V Drain Voltage (V ) pulsed: D +30 V Gate Voltage Range (V ) 8 to 0V PW = 15 ms, DC = 30 % G Drain Current (I ) 10.4A D Drain Current, (I ) 200 mA DQ Gate Current (I ) See plot page 8 G Gate Voltage (V ) -3 Typical V G Power Dissipation (P ), 85C 112W DISS T Range 40 +85 C BASE Input Power (P ), 50, 85C, CW 33dBm IN Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Input Power (P ), 85C, VSWR 3:1, IN 30 dBm recommended operating conditions. VD = 30V, CW Lead Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 3.1 3.6 GHz Input Return Loss >15 dB Output Return Loss >5 dB Output Power ( PIN = 27dBm) 49 dBm Power Added Efficiency ( PIN = 27dBm) 50 % Power Gain (at P = 27 dBm) 23 dB IN Output Power Temperature Coefficient -0.005 dBm/C Test conditions unless otherwise noted: 25C, V = +30V (PW = 15 ms, DC = 30 %), I = 200mA, V = 3V typical. D DQ G - 2 of 13 - Data Sheet Rev. A, March 21, 2019 www.qorvo.com