TGA4040 Qorvo

TGA4040 17 - 43 GHz MPA / Multiplier Key Features Frequency: 17 - 43 GHz 25 dB Nominal Gain Mid-band 22 dBm Nominal Output P1dB 2x and 3x Multiplier Function 0.15 um 3MI pHEMT Technology Chip Dimensions 1.72 x 0.76 x 0.10 mm (0.068 x 0.030 x 0.004 in) Primary Applications Point-to-point radio EW Instrumentation Frequency Multiplier Product Description Amplifier Performance Bias Conditions: Vd = 5 V, Idq = 139 mA The TriQuint TG4040 is a Medium Power Amplifier 30 and Multiplier for a wide band of 17 43GHz 25 Gain applications. The part is designed using TriQuints 20 15 0.15um power pHEMT production process. 10 5 The TGA4040 provides a nominal 25 dB small 0 signal gain with 22 dBm output power 1 dB gain ORL -5 IRL compression. For 2x and 3x Multiplier Function, -10 TGA4040 provides 15 dBm typical of Output -15 Power 9 dBm Pin. -20 -25 The part is ideally suited for applications such as -30 Point-to-Point Radio, EW, Instrumentation and 17 19 21 23 25 27 29 31 33 35 37 39 41 43 frequency multipliers. Frequency (GHz) The TGA4040 is 100% DC and RF tested on- 26 wafer to ensure performance compliance. 24 22 The TGA4040 has a protective surface passivation layer providing environmental robustness. 20 18 Lead-Free & RoHS compliant. 16 5v 225ma 14 5v 172mA 12 5v 139mA 10 17 19 21 23 25 27 29 31 33 35 37 39 41 43 Frequency (GHz) Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev - S-Parameters (dB) P1dB (dBm)TGA4040 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES Vd Drain Voltage 6 V 2/ Vg Gate Voltage Range -2 TO 0 V Id Drain Current TBD 2/ 3/ Ig Gate Current 7 mA 3/ P Input Continuous Wave Power 20 dBm IN P Power Dissipation 1.95 W 2/ 4/ D T Operating Channel Temperature 200 C 5/ CH Mounting Temperature (30 Seconds) 320 C T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ Total current for the entire MMIC. 4/ When operated at this power dissipation with a base plate temperature of 70 C, the median life is 7.3E3 hours. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com May 2009 Rev -