TGA4536-SM Qorvo

TGA4536-SM K-Band Power Amplifier Product Description The Qorvo TGA4536-SM is a K-Band Power Amplifier with integrated power detector. The TGA4536-SM operates from 24.2 26.5 GHz and is designed using Qorvos power pHEMT production process. The TGA4536-SM typically provides 34 dBm of saturated output power with small signal gain of 18 dB. Third Order Intercept is 43 dBm at 23 dBm SCL. The TGA4536-SM is available in a low-cost, surface mount 28 lead 5x5 mm QFN package and is ideally 28 lead 5x5mm QFN package suited for Point-to-Point Radio. Lead-free and RoHS compliant Functional Block Diagram Product Features Frequency Range: 24.2 26.5 GHz 28 27 26 25 24 23 22 Power: 34 dBm Psat, 33 dBm P1dB Gain: 18 dB 21 1 TOI: 43 dBm at 23 dBm/tone 2 20 VDET Integrated Power Detector 3 19 Bias: Vd = 6 V, Idq = 1430 mA, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.3 mm 18 RF OUT RF IN 4 17 5 Performance is typical across frequency. Please reference electrical specification table and data plots for 6 16 more details. 7 15 8 9 10 11 12 13 14 Applications Point- to - Point Radio K-band Sat-Com Ordering Information Part Description TGA4536-SM Waffle Tray TGA4536-SM-T/R 500 pieces on a 7 reel (standard) TGA4536-SM EVB Evaluation Board Data Sheet Rev. F, April 23, 2020 Subject to change without notice - 1 of 14 - www.qorvo.com VG1 VG2 VD1 VD2 VG3 VD3 VREFTGA4536-SM K-Band Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain to Gate Voltage, V V 10 V Drain Voltage 6 V D G Drain Voltage (V ) 6.5 V Drain Current (quiescent, I ) 1430 mA D DQ Drain Current (I ) 3.0 A Drain Current (IDD P1dB) 2000 mA D Gate Voltage Range (V ) -3 to 0 V Gate Voltage (typical) 0.7 V G Gate Current (I Under RF Drive) 25 mA Gate Current (I ) -14 to 110 mA GD G Operating Temperature Range 40 to 85C Power Dissipation, P 20 W DISS Electrical specifications are measured at specified test RF Input Power, CW, T = 25 C 25 dBm conditions. Specifications are not guaranteed over all Channel Temperature, TCH 200 C recommended operating conditions. Mounting Temperature (30 seconds) 260 C Storage Temperature 40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions, unless otherwise noted: 25 C, VD = 6 V, IDQ = 1430 mA, VG = -0.7 V typical, Z0 = 50 Parameter Min Typical Max Units Frequency 24.2 26.5 GHz Small Signal Gain 18 dB Input Return Loss 9 dB Output Return Loss 10 dB Output Power Saturation 34 dBm Output Power 1 dB Gain Compression 33 dBm Output TOI 23 dBm/Tone Pout/tone 43 dBm Gain Temperature Coefficient -0.02 dBm/C Power Temperature Coefficient -0.005 dBm/C Data Sheet Rev. F, April 23, 2020 Subject to change without notice - 2 of 14 - www.qorvo.com