TGA4544-SM 26 31 GHz 1W Power Amplifier RFMD + TriQuint = Qorvo Applications TriQuint Point-to-Point Radio TGA4544 Ka-band Sat-Com 1406 MAL ACS368 26 lead 5x5mm ACQFN package Product Features Functional Block Diagram Frequency Range: 26 31 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 23 dB TOI: 41 dBm at 20 dBm/tone Integrated Power Detector Bias: Vd = 6 V, Idq = 1100 mA, Vg = -0.58 V Typical Package Dimensions: 5.0 x 5.0 x 1.3 mm General Description Pin Configuration The TriQuint TGA4544-SM is a Ka-Band Power Pin No. Label Amplifier with integrated power detector. The 1, 2, 4, 5, 6, 12, 13, 14, GND TGA4544-SM operates from 26 31 GHz and is 15, 17, 18, 19, 26 designed using TriQuints power pHEMT production 3 RF IN process. 7, 25 VG1 8, 24 VG23 The TGA4544-SM typically provides 32 dBm of saturated output power with small signal gain of 23 9, 23 VD12 dB. Third Order Intercept is 41 dBm at 20 dBm SCL. 10, 22 VD3 11 NC The TGA4544-SM is available in a low-cost, surface 16 RFOUT mount 26 lead 5x5 ACQFN package and is ideally 20 VDET suited for Point-to-Point Radio. 21 VREF Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description 26 31 GHz 1W Power TGA4544-SM 3A001.b.2.d Amplifier Standard T/R size = 200 pieces on a 7 reel Datasheet: Rev D 03-10-17 Disclaimer: Subject to change without notice - 1 of 14 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com TGA4544-SM 26 31 GHz 1W Power Amplifier RFMD + TriQuint = Qorvo Recommended Operating Absolute Maximum Ratings Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage,Vd 6.5 V Operating Temp. Range -40 +85 C Gate Voltage,Vg -3.5 to 0 V Vd 6.0 V Drain to Gate Voltage, Vd Vg 10 V Idq 1100 mA Drain Current, Id 2.5 A Id drive 1536 mA Gate Current, Ig -7 to +52 mA Power Dissipation, Pdiss 16.2 W Vg -0.58 V RF Input Power, CW, T = 25 C 25 dBm Channel Temperature, Tch 200 C Ig drive (Under RF Drive) 12 mA Mounting Temperature (30 sec) 260 C Storage Temperature -40 to 150 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: Vd =+6 V, Idq = 1100 mA, Vg =-0.58 V, Temp= +25C, Z = 50 0 Parameter Conditions Min Typ Max Units Operational Frequency Range 26 31 GHz Gain 23 dB Input Return Loss 8 dB Output Return Loss 10 dB Output Power Saturation 32 dBm Output Power 1 dB Gain Compression 31 dBm Output TOI 20 dBm/Tone Pout/tone 41 dBm Gain Temperature Coefficient -0.03 dB/C -0.01 dBm/C Power Temperature Coefficient Datasheet: Rev D 03-10-17 Disclaimer: Subject to change without notice - 2 of 14 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com