TGF2929-HM 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor General Description The Qorvo TGF2929-HM is a 100 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvos proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Hermetic package Product Features Lead-free and ROHS compliant Frequency: DC to 3.5 GHz 1 Output Power (P3dB) : 132 W Evaluation boards are available upon request. 1 Linear Gain : 17.4 dB 1 Typical DEFF (P3dB) : 74.9% Operating Voltage: 28 V Low thermal resistance package Functional Block Diagram CW and Pulse capable Note 1: 2 GHz Applications Space radar Satcomm Military radar Civilian radar Land mobile and military radio communications Test instrumenation Wideband or narrowband amplifiers Jammers Ordering info Part No. Description TGF2929-HM DC 3.5 GHz packaged part TGF2929-HM EVB01 3.1 3.5 GHz EVB Data Sheet Rev. C, February 2020 Subject to change without notice 1 of 19 www.qorvo.com TGF2929-HM 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Drain Voltage Range, VD +12 +28 +50 V Breakdown Voltage,BVDG +145 V Drain Bias Current, I 260 mA DQ Gate Voltage Range, V 7 to +2 V G 1 Gate Voltage, V 2.7 V G Drain Current 12 A Electrical specifications are measured at specified test conditions. Power Dissipation, CW (PDISS) See page 4. W Specifications are not guaranteed over all recommended operating conditions. RF Input Power, CW, T=25C +42 dBm Notes: Storage Temperature 65 to +150 C 1. To be adjusted to desired I DQ Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Gate Leakage VD = +10, VG = 3.8 31.7 mA Data Sheet Rev. C, February 2020 Subject to change without notice 2 of 19 www.qorvo.com