X-On Electronics has gained recognition as a prominent supplier of TGF2956 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. TGF2956 RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

TGF2956 Qorvo

TGF2956 electronic component of Qorvo
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Part No.TGF2956
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
Datasheet: TGF2956 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Id - Continuous Drain Current
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We are delighted to provide the TGF2956 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGF2956 and other electronic components in the RF JFET Transistors category and beyond.

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TGF2956 55 Watt Discrete Power GaN on SiC HEMT Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 12 GHz 47.6 dBm Nominal PSAT at 3 GHz 69.7% Maximum PAE at 3 GHz 19.3 dB Nominal Power Gain at 3 GHz Bias: V = 32 V, I = 200 mA D DQ Technology: TQGaN25 on SiC Chip Dimensions: 1.01 x 2.88 x 0.10 mm General Description Pad Configuration The TriQuint TGF2956 is a discrete 10.08 mm GaN on Pad No. Symbol SiC HEMT which operates from DC-12 GHz. The 1-8 V / RF IN G TGF2956 is designed using TriQuints proven TQGaN25 9-12 V / RF OUT D production process. This process features advanced Backside Source / Ground field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications. Ordering Information Lead-free and RoHS compliant. Part ECCN Description TGF2956 3A001b.3.b 55 Watt GaN HEMT Datasheet: Rev A 10-20-14 Disclaimer: Subject to change without notice - 1 of 19 - 2014 TriQuint www.triquint.com TGF2956 55 Watt Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain to Gate Voltage (V ) 100 V DG Drain Voltage Range (V ) 32 V D Drain Voltage (VD) 40 V Drain Quiescent Current (IDQ) 200 mA Gate Voltage Range (VG) -10 to 0 V (1) Drain Current Under RF Drive ( I ) 3.5 A (Typ.) D Drain Current (ID) 6 A Pinch-off Gate Voltage (VG) 3.5 V (Typ.) Gate Current (I ) -10 to 16.8mA G Channel Temperature (TCH) 225C (Max.) CW Power Dissipation (P ) 53 W D (1) 10% pulses at 3GHz, Power Tuned CW Input Power (P ) 10GHz 40 dBm IN Channel Temperature (T ) 275C CH Mounting Temperature (30 Sec.) 320C Storage Temperature 65 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Datasheet: Rev A 10-20-14 Disclaimer: Subject to change without notice - 2 of 19 - 2014 TriQuint www.triquint.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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