Package Type: 440199 PN: CGHV40200PP CGHV40200PP 200 W, 50 V, GaN HEMT Crees CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Typical Performance Over 1.7-1.9 GHz (T = 25C), CW C Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain 21.7 21.0 20.1 dB Gain P = 38 dBm 16.5 16.1 15.4 dB in P P = 38 dBm 270 250 218 W OUT IN Drain Efficiency P = 38 dBm 64 67 65 % IN FEATURES APPLICATIONS Up to 2.7 GHz Operation 2-Way Private Radio 21 dB Small Signal Gain at 1.8 GHz Broadband Amplifiers 250 W typical P Cellular Infrastructure SAT 67 % Efficiency at P Test Instrumentation SAT 50 V Operation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. 1 www.cree.com/rf Rev 0.0 June 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J 1 Maximum Forward Gate Current I 20.8 mA 25C GMAX 1 Maximum Drain Current I 8.7 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 80 in-oz 3 Thermal Resistance, Junction to Case R 0.94 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation per side of the device 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 CGHV40200PP at P = 166 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page . Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 20.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 2.0 A GS(Q) DC DS D 2 Saturated Drain Current I 15.6 18.7 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 20.8 mA BR DC GS D 3,4 RF Characteristics (T = 25C, F = 1.8 GHz unless otherwise noted) C 0 Power Gain P 16.1 - dB V = 50 V, I = 1.2 A, P = 38 dBm G DD DQ IN Small Signal Gain G 19.8 dB V = 50 V, I = 1.2 A, P = 10 dBm SS DD DQ IN Power Output P 250 W V = 50 V, I = 1.2 A, P = 38 dBm OUT DD DQ IN 5 Drain Efficiency 67 % V = 50 V, I = 1.2 A, P = 38 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 3 : 1 Y V = 28 V, I = 1.2 A, DD DQ P = 200 W CW OUT 6 Dynamic Characteristics Input Capacitance C 29.3 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 7.3 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.61 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging per side of device. 2 Scaled from PCM data. 3 Measured in CGHV40200PP-TB 4 I of 1.2 A is by biasing each device at 0.6 A. DQ 5 Drain Efficiency = P / P OUT DC 6 Capacitance values are for each side of the device. Cree, Inc. 4600 Silicon Drive Copyright 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 2 CGHV40200PP Rev 0.2 www.cree.com/rf