Package Type: 440196 & 440166 PN: CGH55015P1 & CGH55015F1 CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Crees CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well. Typical Performance 5.5-5.8GHz (T = 25C) C Parameter 5.50 GHz 5.65 GHz 5.80 GHz Units Small Signal Gain 10.7 11.0 10.7 dB EVM at P = 23 dBm 1.9 1.8 2.0 % AVE EVM at P = 33 dBm 1.5 1.5 1.7 % AVE Drain Efficiency at P = 33 dBm 25 25 25 % AVE Input Return Loss 11.5 14.5 10.5 dB Note: Measured in the CGH55015-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. Features 5.5 - 5.8 GHz Operation 15 W Peak Power Capability >10.5 dB Small Signal Gain 2 W P < 2.0 % EVM AVE 25 % Efficiency at 2 W Average Power Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications Designed for Multi-carrier DOCSIS Applications Subject to change without notice. 1 www.cree.com/wireless Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Power Dissipation P 7 Watts DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 8.0 C/W 85C JC 3 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH55015 at P = 7W. DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 3.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 115 mA GS(Q) DC DS D Saturated Drain Current I 2.9 3.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 3.6 mA BR DC GS D 2,3 RF Characteristics (T = 25C, F = 5.65 GHz unless otherwise noted) C 0 Small Signal Gain G 8.5 11.0 dB V = 28 V, I = 115 mA SS DD DQ 4 Drain Efficiency 20.6 25 % V = 28 V, I = 115 mA, P = 2.0 W DD DQ AVE Error Vector Magnitude EVM 2.0 2.5 % V = 28 V, I = 115 mA, P = 2.0 W DD DQ AVE No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 115 mA, DD DQ P = 2.0 W AVE Dynamic Characteristics Input Capacitance C 4.5 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.3 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.2 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH55015-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. 4 Drain Efficiency = P / P . OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH55015F1 P1 Rev 4.0