Package Type: 440196 & 440166 PN: CGH55030P2 & CGH55030F2 CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Crees CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz. FEATURES APPLICATIONS 4.5 to 6.0 GHz Operation 2-Way Private Radio 12 dB Small Signal Gain at 5.65 GHz Broadband Amplifiers 30 W typical P Cellular Infrastructure SAT 60 % Efficiency at P Test Instrumentation SAT 28 V Operation Class A, AB Amplifiers for Drivers and Gain Blocks Subject to change without notice. 1 www.cree.com/wireless Rev 3.2 April 2012Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 7.0 mA 25C GMAX 1 Maximum Drain Current I 3 A 25C MAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 4.8 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C 30 seconds C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/products/wireless appnotes.asp 3 Measured for the CGH55030 at P = 28 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 7.2 mA GS(th) DC DS D Gate Quiescent Voltage V -3.0 V V = 28 V, I = 250 mA GS(Q) DC DS D Saturated Drain Current I 5.8 7.0 A V = 6.0 V, V = 2 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 5.65 GHz unless otherwise noted) C 0 Small Signal Gain G 9.0 11.0 - dB V = 28 V, I = 250 mA SS DD DQ 3 Power Output P 20 30 W V = 28 V, I = 250 mA SAT DD DQ 4 Drain Efficiency 50 60 % V = 28 V, I = 250 mA, P DD DQ SAT No damage at all phase angles, Output Mismatch Stress VSWR - 10 : 1 Y V = 28 V, I = 250 mA, P DD DQ SAT Dynamic Characteristics Input Capacitance C 9.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55030-TB. 3 P is defined as I = 0.72 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 the Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/wireless 2 CGH55030F2 P2 Rev 3.2