X-On Electronics has gained recognition as a prominent supplier of CGH55030F2 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGH55030F2 RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGH55030F2 Wolfspeed

CGH55030F2 electronic component of Wolfspeed
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Part No.CGH55030F2
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors 4.5-6GHz 30Watt GaN Sm. Sig. Gain 12dB
Datasheet: CGH55030F2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 181.2692
10 : USD 166.6636
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 157.5752
10 : USD 144.3354
25 : USD 143.1154
50 : USD 143.1154
100 : USD 143.1154
250 : USD 142.9746
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 170.3643
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Height
Length
Operating Temperature Range
Product
Type
Width
Brand
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Class
Fall Time
Nf - Noise Figure
P1db - Compression Point
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGH55030F2 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGH55030F2 and other electronic components in the RF JFET Transistors category and beyond.

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Package Type: 440196 & 440166 PN: CGH55030P2 & CGH55030F2 CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Crees CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz. FEATURES APPLICATIONS 4.5 to 6.0 GHz Operation 2-Way Private Radio 12 dB Small Signal Gain at 5.65 GHz Broadband Amplifiers 30 W typical P Cellular Infrastructure SAT 60 % Efficiency at P Test Instrumentation SAT 28 V Operation Class A, AB Amplifiers for Drivers and Gain Blocks Subject to change without notice. 1 www.cree.com/wireless Rev 3.2 April 2012Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 7.0 mA 25C GMAX 1 Maximum Drain Current I 3 A 25C MAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 4.8 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C 30 seconds C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/products/wireless appnotes.asp 3 Measured for the CGH55030 at P = 28 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 7.2 mA GS(th) DC DS D Gate Quiescent Voltage V -3.0 V V = 28 V, I = 250 mA GS(Q) DC DS D Saturated Drain Current I 5.8 7.0 A V = 6.0 V, V = 2 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 5.65 GHz unless otherwise noted) C 0 Small Signal Gain G 9.0 11.0 - dB V = 28 V, I = 250 mA SS DD DQ 3 Power Output P 20 30 W V = 28 V, I = 250 mA SAT DD DQ 4 Drain Efficiency 50 60 % V = 28 V, I = 250 mA, P DD DQ SAT No damage at all phase angles, Output Mismatch Stress VSWR - 10 : 1 Y V = 28 V, I = 250 mA, P DD DQ SAT Dynamic Characteristics Input Capacitance C 9.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55030-TB. 3 P is defined as I = 0.72 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 the Cree logo are registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/wireless 2 CGH55030F2 P2 Rev 3.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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