PN: CGHV1J006D CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Crees CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. FEATURES APPLICATIONS 17 dB Typ. Small Signal Gain at 10 GHz Satellite Communications 60% Typ. PAE at 10 GHz PTP Communications Links 6 W Typical Psat Marine Radar 40 V Operation Pleasure Craft Radar Up to 18GHz Operation Port Vessel Traffic Services Broadband Amplifiers High Efficiency Amplifiers Packaging Information Bare die are shipped in Gel-Pak containers or on tape. Non-adhesive tacky membrane immobilizes die during shipment. Subject to change without notice. 1 www.cree.com/rf Rev 0. August 2014Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 100 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 1.2 mA 25C GMAX 1 Maximum Drain Current I 0.8 A 25C DMAX 2 Thermal Resistance, Junction to Case (packaged) R 17.5 C/W 85C JC 2 Thermal Resistance, Junction to Case (die only) R 13.2 C/W 85C JC Mounting Temperature T 320 C 30 seconds S 1 Note Current limit for long term reliable operation. 2 Note Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CMC carrier. Electrical Characteristics (Frequency = 10 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 1.2 mA (GS)TH DS D Gate Quiescent Voltage V -2.7 VDC V = 40 V, I = 70 mA (GS)Q DD DQ 1 Saturated Drain Current I 1.0 1.1 A V = 6.0 V, V = 2.0 V SAT DS GS Drain-Source Breakdown Voltage V 100 V V = -8 V, I =1.2 mA BD GS D On Resistance R 2.3 V = 0.1 V, V = 0 V ON DS GS Gate Forward Voltage V 1.85 V I = 1.2 mA G-ON GS RF Characteristics Small Signal Gain G 17 dB V = 40 V, I = 70 mA SS DD DQ 1 Saturated Power Output P 6 W V = 40 V, I = 70 mA SAT DD DQ 2 Drain Efficiency 60 % V = 40 V, I = 70 mA DD DQ Intermodulation Distortion IM3 -30 dBc V = 40 V, I = 70 mA, P = 6 W PEP DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 40 V, I = 70 mA, DD DQ P = 6 W CW OUT Dynamic Characteristics Input Capacitance C 2.0 pF V = 40 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 0.35 pF V = 40 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.5 pF V = 40 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Scaled from PCM unit cell. 1 P is defined as I = 0.12 mA. SAT G 2 Drain Efficiency = P / P OUT DC Cree, Inc. Copyright 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree 4600 Silicon Drive and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CGHV1J006D Rev 0.6