TGF2022-24 Qorvo

Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-24 Key Features and Performance Frequency Range: DC - 20 GHz > 34 dBm Nominal Psat 58% Maximum PAE 42 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 2.4mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 180-300mA (Under RF Drive, Id rises from 180mA to 600mA) Product Description Chip Dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in) The TriQuint TGF2022-24 is a discrete Primary Applications 2.4 mm pHEMT which operates from Point-to-point Radio DC-20 GHz. The TGF2022-24 is High-reliability space designed using TriQuints proven standard 0.35um power pHEMT Military production process. Base Stations Broadband Wireless Applications The TGF2022-24 typically provides > 34 dBm of saturated output power with 35 power gain of 13 dB. The maximum power added efficiency is 58% which 30 makes the TGF2022-24 appropriate for 25 MSG high efficiency applications. 20 MAG The TGF2022-24 is also ideally suited for 15 Point-to-point Radio, High-reliability 10 space, and Military applications. 5 The TGF2022-24 has a protective 0 surface passivation layer providing 02468 10 12 14 16 environmental robustness. Frequency (GHz) Lead-free and RoHS compliant Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com Maximum Gain (dB)Advance Product Information September 19, 2005 TABLE I TGF2022-24 MAXIMUM RATINGS Symbol Parameter 1/ Value Notes + V Positive Supply Voltage 12.5 V 2/ - V Negative Supply Voltage Range -5V to 0V + I Positive Supply Current 1120 mA 2/ I Gate Supply Current 28 mA G P Input Continuous Wave Power 29 dBm 2/ IN P Power Dissipation See note 3 2/ 3/ D T Operating Channel Temperature 150 C 4/ CH T Mounting Temperature (30 Seconds) 320 C M T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P (max) = (150 C TBASE C) / 34.5 (C/W) D 4/ Junction operating temperature will directly affect the device median time to failure (T ). For maximum life, it is recommended that junction temperatures be maintained M at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (T = 25 qC, Nominal) A Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 720 - mA Gm Transconductance - 900 - mS V Pinch-off Voltage -1.5 -1 -0.5 V P V Breakdown Voltage -30 - -14 V BGS Gate-Source V Breakdown Voltage -30 - -14 V BGD Gate-Drain Note: For TriQuints 0.35um power pHEMT devices, RF breakdown >> DC breakdown 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com