TGF2023-2-20 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-2- 20 is designed using Qorvos proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-20 typically provides 50.2 dBm of saturated output power with power gain of 14 dB at 6 GHz. The maximum power added efficiency is 65.1% which makes the TGF2023-2-20 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram 17 Key Features Frequency Range: DC - 14 GHz 1 Output Power (P3dB) : 50.2 dBm 1-16 1 Maximum PAE : 65.1% 1 Linear Gain : 17 dB Bias: V = 12 - 32 V, I = 400 - 2000 mA D DQ Technology: QGaN25 on SiC Chip Dimensions: 0.82 x 4.56 x 0.10 mm Note 1: 6 GHz Applications Defense & Aerospace Pad Configuration Broadband Wireless Pad No. Symbol 1-16 VG / RF IN 17 V / RF OUT D Backside Source / Ground Ordering Information Part Number Description TGF2023-2-20 100 Watt GaN HEMT Data Sheet Rev. E, November 26, 2019 Subject to change without notice 1 of 21 www.qorvo.com TGF2023-2-20 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Recommended Operating Conditions Absolute Maximum Ratings Parameter Rating Parameter Min Typ Max Units Drain to Gate Voltage (VDG) 100 V Drain Voltage Range (VD) +28 V Drain Quiescent Current (IDQ) 1000 mA Gate Voltage Range (VG) 7 to +2 V 1 Gate Voltage, V 3.7 2.8 2.3 V G Drain Current (ID) 20 A Gate Leakage: V = +10 V, D Gate Current (I ) 20 to 56 mA G 20 mA VG = 3.7 V Power Dissipation, CW (P ) See graph on pg.4. D Electrical specifications are measured at specified test conditions. CW Input Power (P ) +43 dBm IN Specifications are not guaranteed over all recommended operating conditions. Storage Temperature 65 to 150C Note: Exceeding any one or a combination of the Absolute Maximum Rating 1. To be adjusted to desired I DQ conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. RF Characterization Model Optimum Power Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (V ) 28 28 28 28 28 28 28 28 V D Bias Current (I ) 400 1000 400 1000 400 1000 400 1000 mA DQ Output P3dB (P ) 50.3 50.2 50.2 50.2 50.2 50.1 50.2 50.2 dBm 3dB PAE P (PAE ) 62.4 61.7 58.7 58.6 56.1 56 53 53.3 % 3dB 3dB Gain P3dB (G ) 19.1 19.9 13.2 14 10.7 11.5 9.0 9.6 dB 3dB (1) Parallel Resistance (Rp) 64.4 64.8 59.7 59.2 54.8 54.4 49.6 49.2 mm (1) Parallel Capacitance (Cp) 0.264 0.255 0.291 0.295 0.317 0.315 0.326 0.324 pF/mm (2) Load Reflection Coefficient 0.20131 0.20131 0.38132 0.38132 0.49137 0.49138 0.57143 0.56143 -- ( ) L Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 4 . RF Characterization Model Optimum Efficiency Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (V ) 28 28 28 28 28 28 28 28 V D Bias Current (I ) 400 1000 400 1000 400 1000 400 1000 mA DQ Output P3dB (P3dB) 48.5 48.7 48.8 48.9 49.0 49.1 49.2 49.1 dBm PAE P (PAE ) 69.5 68.5 66 65.1 62.2 61.8 58.4 58.4 % 3dB 3dB Gain P3dB (G3dB) 21.1 21.7 14.7 15.2 11.8 12.5 10.1 10.6 dB (1) Parallel Resistance (R ) 126 123 110 103 94.9 90.3 81.6 80.5 mm p (1) Parallel Capacitance (Cp) 0.392 0.385 0.388 0.387 0.379 0.379 0.373 0.378 pF/mm (2) Load Reflection Coefficient 0.4078 0.3978 0.58111 0.56112 0.64124 0.63125 0.69133 0.69133 -- (L) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 4 . Data Sheet Rev. E, November 26, 2019 Subject to change without notice 2 of 21 www.qorvo.com