TGF2160 1600um Discrete GaAs pHEMT Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 20 GHz 32.5 dBm Typical Output Power - P1dB 10.4 dB Typical Gain 12 GHz 63% Typical PAE 12 GHz No Vias Technology: 0.25 um GaAs pHEMT Chip Dimensions: 0.41 x 0.54 x 0.10 mm General Description Pad Configuration The TriQuint TGF2160 is a discrete 1600-Micron pHEMT Pad Dimensions Terminals which operates from DC to 20 GHz. The TGF2160 is G (71um X 71um) Gate designed using TriQuints proven standard 0.25um D (71um X 71um) Drain power pHEMT production process. This process S (96um X 71um) Source (outermost) features advanced techniques to optimize microwave S (96um X 106um) Source (center) power and efficiency at high drain bias operating conditions. The TGF2160 typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB and 63% power- added efficiency at 1 dB compression. This performance makes the TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental Ordering Information robustness and scratch protection. Part ECCN Description Lead-free and RoHS compliant. TGF2160 EAR99 1600um GaAs pHEMT Datasheet: Rev A 06-23-13 Disclaimer: Subject to change without notice - 1 of 6- 2013 TriQuint www.triquint.com TGF2160 1600um Discrete GaAs pHEMT Absolute Maximum Ratings Symbol Parameter Absolute Continuous Units (2) Vds Drain-Source Voltage 12 8 V Vgs Gate- Source Voltage -7 -3 V (2) Id Drain Current Idss Idss mA Ig,f Forward Gate Current 80 14 mA (3) (4) (5) Tch Channel Temperature 175 150 C Tstg Storage Temperature -65 to 150 -65 to 150 C (2) Pin Input Continuous Wave Power 27 3 dB Compression dBm Ptot Total Power Dissipation 8.4 5.6 W Notes: 1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4. When operated at this channel temperature, the median life is 1.0E+5 hours. 5. When operated at this channel temperature, the median life is 1.0E+6 hours. Electrical Characteristics Test conditions unless otherwise noted: Temperature = 25 C. Symbol Parameter Conditions Min Typ Max Units Freq = 12 GHz, Vds = 8 V, Ids = 50% P1dB Output Power at 1dB Compression 32.5 dBm Idss Freq = 12 GHz, Vds = 8 V, Ids = 50% G1dB Gain at P1dB 10.4 dB Idss Freq = 12 GHz, Vds = 8 V, Ids = 50% PAE PAE at P1dB 63 % Idss (1) Idss Saturated Drain Current Vds = 2 V, Vgs = 0 V 320 517 714 mA Gm Transconductance Vds = 2 V, Ids = 50% Idss 619 mS Vp Pinch-Off Voltage Vds = 2 V, Ids = 1.60 mA -1.5 -1.0 -0.5 V BVgd Gate-Drain Breakdown Voltage Ig = 1.60 mA, source open -15 -12 V BVgs Gate-Source Breakdown Voltage Ig = 1.60 mA, drain open -15 V Rth Thermal Resistance AuSn eutectic attach 31 C/W Based on IR Scan Notes: 1. Typical Standard Deviation of 11.4mA (1 ). Datasheet: Rev A 06-23-13 Disclaimer: Subject to change without notice - 2 of 6- 2013 TriQuint www.triquint.com