X-On Electronics has gained recognition as a prominent supplier of ATF-38143-BLKG RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. ATF-38143-BLKG RF JFET Transistors are a product manufactured by Broadcom. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

ATF-38143-BLKG Broadcom

ATF-38143-BLKG electronic component of Broadcom
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See Product Specifications
Part No.ATF-38143-BLKG
Manufacturer: Broadcom
Category: RF JFET Transistors
Description: RF JFET Transistors Transistor GaAs Low Noise
Datasheet: ATF-38143-BLKG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 7300
Multiples : 7300
7300 : USD 0.6253
7500 : USD 0.6083
14800 : USD 0.5848
36500 : USD 0.5782
73000 : USD 0.5639
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1365
250 : USD 0.9148
500 : USD 0.7415
1000 : USD 0.6521
3000 : USD 0.5149
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Forward Transconductance - Min
Nf - Noise Figure
P1db - Compression Point
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ATF-38143-BLKG from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ATF-38143-BLKG and other electronic components in the RF JFET Transistors category and beyond.

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ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologiess ATF-38143 is a high dynamic Lead-free Option Available range, low noise, PHEMT housed in a 4-lead SC-70 (SOT- Low Noise Figure 343) surface mount plastic package. Excellent Uniformity in Product Specifi cations Based on its featured performance, ATF-38143 is suitable Low Cost Surface Mount Small Plastic Package for applications in cellular and PCS handsets, LEO SOT-343 (4 lead SC-70) systems, MMDS, and other systems requiring super Tape-and-Reel Packaging Option Available low noise fi gure with good intercept in the 450 MHz to 10 GHz frequency range. Surface Mount Package SOT-343 Specifi cations 1.9 GHz; 2 V, 10 mA (Typ.) 0.4 dB Noise Figure 16 dB Associated Gain 12.0 dBm Output Power at 1 dB Gain Compression 22.0 dBm Output 3rd Order Intercept Pin Connections and Package Marking Applications DRAIN SOURCE Low Noise Amplifi er for Cellular/PCS Handsets LNA for WLAN, WLL/RLL, LEO, and MMDS Applications SOURCE GATE General Purpose Discrete PHEMT for Other Ultra Low Noise Applications Note: Top View. Package marking provides orientation and identifi cation. 8P = Device code Attention: Observe precautions for x = Date code character. handling electrostatic sensitive devices. A new character is assigned for each month, year. ESD Machine Model (Class A) ESD Human Body Model (Class 1) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. 8Px[1] ATF-38143 Absolute Maximum Ratings Notes: Absolute 1. Operation of this device above any one of Symbol Parameter Units Maximum these parameters may cause permanent [2] damage. V Drain - Source Voltage V 4.5 DS 2. Source lead temperature is 25C. Derate V Gate - Source Voltage V -4 GS 6 mW/C for T > 64C. L 3. Thermal resistance measured using 150C V Gate Drain Voltage V -4 GD Liquid Crystal Measurement method. I Drain Current mA I DS dss [2] P Total Power Dissipation mW 580 diss P RF Input Power dBm 17 in max T Channel Temperature C 160 CH T Storage Temperature C -65 to 160 STG [3] Thermal Resistance C/W 165 jc Product Consistency Distribution Charts 250 300 Cpk = 1.59062 +0.6 V Stdev = 0.73 dBm 250 6 Wafers 200 Sample Size = 450 200 150 0 V -3 Std +3 Std 150 100 100 50 50 0.6 V 0 0 4 01 2 3 5 18 20 22 24 26 V (V) DS OIP3 (dB) Figure 1. Typical I-V Curves. (V = -0.2 V per step) Figure 2. OIP3 @ 2 GHz, 2V, 10 mA. GS LSL=18.5, Nominal=21.99, USL=26.0 180 160 Cpk = 4.08938 Cpk = 2.58097 Stdev = 0.03 dB Stdev = 0.14 dB 150 6 Wafers 6 Wafers 120 Sample Size = 450 Sample Size = 450 120 -3 Std +3 Std -3 Std +3 Std 90 80 60 40 30 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 15 15.5 16 16.5 17 17.5 18 GAIN (dB) NF (dB) Figure 3. NF @ 2 GHz, 2V, 10 mA. Figure 4. Gain @ 2 GHz, 2V, 10 mA. LSL=0, Nominal=0.44, USL=0.85 LSL=15.0, Nominal=16.06, USL= 18.0 Note: an optimal noise match and a realizeable match based on production Distribution data sample size is 450 samples taken from 6 diff erent wafers. Future wafers allocated to this product may have nominal values test requirements. Circuit losses have been de-embedded from actual measurements. anywhere within the upper and lower spec limits. Measurements made on production test board. This circuit represents a trade-off between 2 I (mA) DS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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