ATF-38143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description Features
Avago Technologiess ATF-38143 is a high dynamic
Lead-free Option Available
range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-
Low Noise Figure
343) surface mount plastic package.
Excellent Uniformity in Product Specifi cations
Based on its featured performance, ATF-38143 is suitable
Low Cost Surface Mount Small Plastic Package
for applications in cellular and PCS handsets, LEO
SOT-343 (4 lead SC-70)
systems, MMDS, and other systems requiring super
Tape-and-Reel Packaging Option Available
low noise fi gure with good intercept in the 450 MHz to
10 GHz frequency range.
Surface Mount Package SOT-343 Specifi cations
1.9 GHz; 2 V, 10 mA (Typ.)
0.4 dB Noise Figure
16 dB Associated Gain
12.0 dBm Output Power at 1 dB Gain Compression
22.0 dBm Output 3rd Order Intercept
Pin Connections and Package Marking
Applications
DRAIN SOURCE
Low Noise Amplifi er for Cellular/PCS Handsets
LNA for WLAN, WLL/RLL, LEO, and MMDS
Applications
SOURCE GATE
General Purpose Discrete PHEMT for Other Ultra Low
Noise Applications
Note:
Top View. Package marking provides orientation and identifi cation.
8P = Device code Attention: Observe precautions for
x = Date code character.
handling electrostatic sensitive devices.
A new character is assigned for each month, year.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
8Px[1]
ATF-38143 Absolute Maximum Ratings
Notes:
Absolute
1. Operation of this device above any one of
Symbol Parameter Units Maximum
these parameters may cause permanent
[2] damage.
V Drain - Source Voltage V 4.5
DS
2. Source lead temperature is 25C. Derate
V Gate - Source Voltage V -4
GS
6 mW/C for T > 64C.
L
3. Thermal resistance measured using 150C
V Gate Drain Voltage V -4
GD
Liquid Crystal Measurement method.
I Drain Current mA I
DS dss
[2]
P Total Power Dissipation mW 580
diss
P RF Input Power dBm 17
in max
T Channel Temperature C 160
CH
T Storage Temperature C -65 to 160
STG
[3]
Thermal Resistance C/W 165
jc
Product Consistency Distribution Charts
250 300
Cpk = 1.59062
+0.6 V
Stdev = 0.73 dBm
250
6 Wafers
200
Sample Size = 450
200
150
0 V
-3 Std +3 Std
150
100
100
50
50
0.6 V
0
0
4
01 2 3 5 18 20 22 24 26
V (V)
DS OIP3 (dB)
Figure 1. Typical I-V Curves. (V = -0.2 V per step)
Figure 2. OIP3 @ 2 GHz, 2V, 10 mA.
GS
LSL=18.5, Nominal=21.99, USL=26.0
180 160
Cpk = 4.08938
Cpk = 2.58097
Stdev = 0.03 dB
Stdev = 0.14 dB
150
6 Wafers
6 Wafers
120
Sample Size = 450
Sample Size = 450
120
-3 Std +3 Std -3 Std +3 Std
90 80
60
40
30
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 15 15.5 16 16.5 17 17.5 18
GAIN (dB)
NF (dB)
Figure 3. NF @ 2 GHz, 2V, 10 mA. Figure 4. Gain @ 2 GHz, 2V, 10 mA.
LSL=0, Nominal=0.44, USL=0.85 LSL=15.0, Nominal=16.06, USL= 18.0
Note:
an optimal noise match and a realizeable match based on production
Distribution data sample size is 450 samples taken from 6 diff erent
wafers. Future wafers allocated to this product may have nominal values test requirements. Circuit losses have been de-embedded from actual
measurements.
anywhere within the upper and lower spec limits. Measurements made
on production test board. This circuit represents a trade-off between
2
I (mA)
DS