PN: CGHV27060MP
CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
Crees CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor
(HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a
broadband device with no internal input or output match which allows for the agility
to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP
makes for an excellent transistor for pulsed applications at UHF, L Band or low S
Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation
amplifiers in the power class of 10 to 15W average power in high efficiency topologies
such as Class A/B, F or Doherty amplifiers.
Typical Performance Over 2.5 - 2.7 GHz (T = 25C) of Demonstration Amplifier
C
Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units
Gain @ 41.5 dBm Avg P 18.25 18.5 18.25 dB
OUT
ACLR @ 41.5 dBm Avg P -34 -37 -38 dBc
OUT
Drain Efficiency @ 41.5 dBm Avg P 33 35 33 %
OUT
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, V = 50 V, I = 125 mA.
DD DS
Typical Performance Over 2.5 - 2.7 GHz (T = 25C) of Demonstration Amplifier
C
Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units
Gain 16.5 16.3 16.2 dB
Output Power 84 82 79 W
Drain Efficiency 71 69 65 %
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 s, 10% duty cycle, P = 33 dBm.
IN
Features - WCDMA Features - Pulsed
2.5 - 2.7 GHz Reference Design Amplifier 16.5 dB Gain at Pulsed P
SAT
18.5 dB Gain at 14 W P 70% Efficiency at Pulsed P
AVE SAT
-35 dBc ACLR at 14 W P 80W at Pulsed P
AVE SAT
35% Efficiency at 14 W P
AVE
High Degree of DPD Correction Can be Applied
Subject to change without notice.
1
www.cree.com/rf
Rev 1.2 December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 150 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 10.4 mA 25C
GMAX
1
Maximum Drain Current I 6.3 A 25C
DMAX
2
Soldering Temperature T 245 C
S
3
Thermal Resistance, Junction to Case R 2.6 C/W 85C, P = 52 W
JC DISS
Thermal Resistance Pulsed 10%, 100 s, Junction to Case R 1.95 C/W 85C, P = 62W, 100 s/10%
JC DISS
4
Case Operating Temperature T -40, +90 C CW
C
Note:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at