Package Types: 440223
PN: CGHV40180F
CGHV40180F
180 W, DC - 1000 MHz, 50 V, GaN HEMT
Crees CGHV40180F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGHV40180F ideal for linear
and compressed amplifier circuits. The transistor is available in a 2-lead
flange package.
Typical Performance Over 800 MHz - 1000 MHz (T = 25C), 50 V
C
Parameter 800 MHz 850 MHz 900 MHz 950 MHz 1000 MHz Units
Small Signal Gain 25.6 25.2 24.9 24.4 24.3 dB
Gain @ Pin 34 dBm 20.4 20.8 20.3 20.1 20.1 dB
Output Power @ Pin 34 dBm 275 302 28.9 257 257 W
EFF @ Pin 34 dBm 67 75 73 73 71 %
Note:
Measured CW in the CGHV40180F-AMP Application circuit.
FEATURES APPLICATIONS
Up to 1000 MHz Operation Military Communications
24 dB Small Signal Gain at 900 MHz Public Safety VHF-UHF applications
20 dB Power Gain at 900 MHz Radar
250 W Typical Output Power at 900 MHz Medical
75 % Efficiency at P Broadband Amplifiers
SAT
Subject to change without notice.
1
www.cree.com/rf
Rev 1.0 -Novemver 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 125 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
1
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 42 mA 25C
GMAX
Maximum Drain Current I 18 A 25C
DMAX
2
Soldering Temperature T 245 C
S
Screw Torque 40 in-oz
CGHV40180F Thermal Resistance, Junction to Case R 0.95 C/W P = 150, 85C
JC DISS
Maximum dissipated power 150 W P = 150, 85C
DISS
3
Case Operating Temperature T -40, +150 C
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
See also, Power Derating Curve on Page 5.
Electrical Characteristics
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics (T = 25C)
C
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 20.8 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 50 V, I = 1000 mA
GS(Q) DC DS D
2
Saturated Drain Current I 31.4 37.6 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 41.8 mA
BR DC GS D
2,3
RF Characteristics (T = 25C, F = 900 MHz unless otherwise noted)
C 0
Small Signal Gain G 24.9 dB V = 50 V, I = 1.0 A, P =10dBm CW
SS DD DQ in
Power Gain G 20.3 dB V = 50 V, I = 1.0 A, P =34 dBm CW
P DD DQ in
Power Output at Saturation P 54.3 dBm V = 50 V, I = 1.0 A, P =34 dBm CW
OUT DD DQ in
4
Drain Efficiency 73 % V = 50 V, I = 1.0 A, P =34 dBm CW
DD DQ in
No damage at all phase angles,
Output Mismatch Stress VSWR 3 : 1 Y
V = 50 V, I = 1.0 A, P = 180 W CW
DD DQ OUT
Dynamic Characteristics
Input Capacitance C 57.8 pF V = 50 V, V = -8 V, f = 1 MHz
GS DS gs
Output Capacitance C 13.7 pF V = 50 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 1.23 pF V = 50 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measurements are to be performed using Cree production test fixture AD-838292F-TB
4
Drain Efficiency = P /PDC
OUT
Cree, Inc.
4600 Silicon Drive
Copyright 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
2 CGHV40180F Rev 1.0
www.cree.com/rf