X-On Electronics has gained recognition as a prominent supplier of QPD0020 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. QPD0020 RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

QPD0020 Qorvo

QPD0020 electronic component of Qorvo
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Part No.QPD0020
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors Evaluation Board - QPD0020
Datasheet: QPD0020 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the QPD0020 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPD0020 and other electronic components in the RF JFET Transistors category and beyond.

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QPD0020 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor Product Overview The QPD0020 is a 35 W unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the 20 Pin 4x3 mm QFN Package final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power Key Features amplifier. Operating Frequency Range: DC to 6 GHz The device is housed in an industry-standard 4x3 mm Operating Drain Voltage: +48 V surface mount QFN package. (1) Maximum Output Power (P ): 34.7 W SAT (1) Lead-free and ROHS compliant. Maximum Drain Efficiency: 77.8% (1) Efficiency-Tuned P3dB Gain: 18.8 dB Surface Mount Plastic Package Notes: 1. Based on 2.7 GHz load pull data. Functional Block Diagram Applications W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna Land Mobile and Military Radio Communications General Purpose Applications Ordering Information Part Number Description QPD0020S2 Sample 2 Pieces QPD0020TR7 7 Reel 500 Pieces QPD0020EVB02 2.62 2.69 GHz Evaluation Board Data Sheet Rev. C, October 2021 1 of 11 www.qorvo.com Subject to change without notice All rights reserved QPD0020 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Breakdown Voltage (BVDG) +165 V Gate Voltage (VG) 2.7 V Gate Voltage Range (VG1,2) 7 to +2 V Drain Voltage (VD) +48 V Drain Voltage (VD1,2) +55 V Quiescent Current (IDQ) 30 mA Electrical specifications are measured at specified test Peak RF Input Power 29 dBm conditions. Specifications are not guaranteed over all VSWR Mismatch, P1dB Pulse (20% 10:1 recommended operating conditions. Duty Cycle, 100 s Width), T = +25C Storage Temperature 65 to 150C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 2600 2690 MHz Quiescent Current 30 mA Gain 3 dB Compression 14.8 16.7 dB Power (PSAT) 3 dB Compression 42.6 44.0 dBm Drain Efficiency 3 dB Compression 58.0 66.7 % Gate Leakage VD = 10 V, VG = 3.8 V 4.3 0.4 mA Test conditions unless otherwise noted: VD = +48V, IDQ = 30 mA, T=+25C, pulsed CW signal (10% duty cycle, 1 ms width) on a single-ended reference design fixture tuned for 2620 2690 MHz. Thermal Information Parameter Conditions Values Units Thermal Resistance, Peak IR Surface T = +105C, T = 144C CASE CH 5.3 C/W Temperature at Average Power (JC) CW: PDISS = 7.4 W, POUT = 1.6 W Thermal Resistance, Peak IR Surface T = +105C, T = 169C CASE CH 5.9 C/W Temperature at Average Power (JC) CW: PDISS = 10.9 W, POUT = 5.6 W Notes: 1. Thermal resistance is measured to package backside. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Data Sheet Rev. C, October 2021 2 of 11 www.qorvo.com Subject to change without notice All rights reserved

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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