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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MMBFJ305 N-Channel RF Amplifier July 2011 MMBFJ305 N-Channel RF Amplifier SOT-23 Features G This device is designed primarily for electronic switching S applications such as low On Resistance analog switching. Marking : 6Q Sourced from process 50. D Note : Drain & Source are interchangeable. Absolute Maximum Ratings* T = 25C unless otherwise noted A Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T T Operating and Storage Junction Temperature Range -55 to +150 C J, STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T = 25 C unless otherwise noted A Symbol Parameter Value Units P Total Device Dissipation 225 mW D Derate above 25C 1.8 mW/ C R Thermal Resistance, Junction to Ambient 556 C/W JA * Device mounted on FR-4 PCB 1.6 x 1.6 x 0.06. Electrical Characteristics T =25 C unless otherwise noted A Symbol Parameter Conditions Min. Max. Units Off Characteristics V Gate-Source Breakdown Voltage I = -1.0A, V = 0 -30 V (BR)GSS G DS I Gate Reverse Current V = -20V, V = 0 -100 pA GSS GS DS V (off) Gate-Source Cutoff Voltage V = 15V, I = 1.0nA -0.5 -3.0 V GS DS D On Characteristics I Zero-Gate Voltage Drain Current* V = 15V, V = 0 1.0 8.0 mA DSS DS GS Small Signal Characteristics gfs Forward Transfer Conductance V = 15V, V = 0, f = 1.0kHz 3000 mhos DS GS g Output Conductance V = 15V, V = 0, f = 1.0kHz 50 mhos OSS DS GS * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ305 Rev. A0 1