X-On Electronics has gained recognition as a prominent supplier of MMBFU310LT1G JFET across the USA, India, Europe, Australia, and various other global locations. MMBFU310LT1G JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFU310LT1G ON Semiconductor

MMBFU310LT1G electronic component of ON Semiconductor
MMBFU310LT1G ON Semiconductor
MMBFU310LT1G JFET
MMBFU310LT1G  Semiconductors

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See Product Specifications
Part No. MMBFU310LT1G
Manufacturer: ON Semiconductor
Category: JFET
Description: SOT-23 JFETs ROHS
Gunn diode transimpedance amplifier optimized for use with photodiodes.
Datasheet: MMBFU310LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1102 ea
Line Total: USD 330.6 
Availability - 23280
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
23280
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1102
6000 : USD 0.1097
9000 : USD 0.0951
12000 : USD 0.0945
27000 : USD 0.0939
51000 : USD 0.0934
102000 : USD 0.093
150000 : USD 0.0925

2749
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 5
Multiples : 5
5 : USD 0.392
50 : USD 0.315
150 : USD 0.2176
500 : USD 0.1859
3000 : USD 0.1539
6000 : USD 0.1454

5611
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 236
Multiples : 1
236 : USD 0.2751
376 : USD 0.1729
380 : USD 0.1712
500 : USD 0.1695
1000 : USD 0.1495
3000 : USD 0.1084

23280
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1434
6000 : USD 0.1426
9000 : USD 0.1236
12000 : USD 0.1229
27000 : USD 0.122

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Configuration
Mounting Style
Package / Case
Packaging
Series
Drain Source Voltage Vds
Brand
Drain-Source Current At Vgs 0
Gate-Source Breakdown Voltage
Factory Pack Quantity :
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We are delighted to provide the MMBFU310LT1G from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFU310LT1G and other electronic components in the JFET category and beyond.

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MMBFU310LT1G is an N-Channel enhancement mode Field-Effect Transistor (FET) manufactured by ON Semiconductor. It has a maximum drain-source voltage of -55 volts, a maximum drain current of -3 amps, and a maximum gate-source voltage of ±20 volts. It is typically used as a switch and has a maximum operating temperature of +175 °C. The transistor is encapsulated in a D-PAK surface-mount package and is ideal for automated assembly processes.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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