X-On Electronics has gained recognition as a prominent supplier of MMBT2222 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT2222 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT2222 ON Semiconductor

MMBT2222 electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBT2222
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor General Purpose
Datasheet: MMBT2222 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13889: USD 0.0293 ea
Line Total: USD 406.95 
Availability - 0
MOQ: 13889  Multiples: 13889
Pack Size: 13889
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.0505
10 : USD 0.0476
100 : USD 0.0395
250 : USD 0.0351

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 13889
Multiples : 13889
13889 : USD 0.0293

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the MMBT2222 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT2222 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT2222 MMBT2222 NPN General Purpose Amplifier Sourced from process 19. C E SOT-23 B Mark: 1B Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Emitter Voltage 30 V CEO Collector-Base Voltage 60 V V CBO Emitter-Base Voltage 5.0 V V EBO I Collector Current - Continuous 0.6 A C , T Operating and Storage Junction Temperature Range -55 ~ 150 C T J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 A, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V (BR)EBO E C I Collector Cutoff Current V = 50V, I = 0 10 A CBO CB E = 50V, I = 0, T = 125C 10 A V CB E a Emitter Cutoff Current V = 3.0V, I = 0 10 nA I EBO EB C On Characteristics DC Current Gain I = 0.1mA, V = 10V 35 h FE C CE I = 1.0mA, V = 10V 50 C CE I = 10mA, V = 10V 75 C CE = 150mA, V = 10V * 100 300 I C CE I = 150mA, V = 1.0V * 50 C CE I = 500mA, V = 10V * 30 C CE V Collector-Emitter Saturation Voltage * I = 150mA, I = 15V 0.4 V CE(sat) C B = 500mA, I = 50V 1.6 I C B V Base-Emitter Saturation Voltage I = 150mA, I = 15V 1.3 V BE(sat) C B I = 500mA, I = 50V 2.6 C B 2004 Fairchild Semiconductor Corporation Rev. B, May 2004MMBT2222 Electrical Characteristics (Continued) T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Small Signal Characteristics f Curent Gain Bandwidth Product I = 20mA, V = 20V, f = 100MHz 250 T C CE C Output Capacitance V = 10V, I = 0, f = 1MHz 8.0 pF obo CB E C Input Capacitance V = 0.5V, I = 0, f = 1MHz 30 pF ibo EB C Switching Characteristics t Delay Time V = 30V, V = 0.5V, 10 ns d CC BE(OFF) I = 150mA, I = 15mA t Rise Time C B1 25 ns r t Storage Time V = 30V, I = 150mA, 225 ns s CC C I = I = 15mA t Fall Time B1 B2 60 ns f * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25C 2.8 mW/C R Thermal Resistance, Junction to Ambient 357 C/W JA * Device mounted on FR-4PCB 1.6 1.6 0.06. 2004 Fairchild Semiconductor Corporation Rev. B, May 2004

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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