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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MMBT2222AT NPN Epitaxial Silicon Transistor September 2008 MMBT2222AT NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings T = 25C unless otherwise noted a Symbol Parameter Value Unit V Collector-Base Voltage 75 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C T Junction Temperature 150 C J T Storage Temperature Range -55 ~ 150 C STG * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25C unless otherwise noted a Symbol Parameter Max Unit P Collector Power Dissipation, by R 250 mW C JA R Thermal Resistance, Junction to Ambient 500 C/W JA * Minimum land pad. Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Unit BV Collector-Base Breakdown Voltage I = 10A, I = 0 75 V CBO C E BV Collector-Emitter Breakdown Voltage I = 1mA, I = 0 40 V CEO C B BV Emitter-Base Breakdown Voltage I = 10A, I = 0 6 V EBO E C I Collector Cut-off Current V = 60V, V = 3V 10 nA CEX CE EB(OFF) h DC Current Gain V = 1V, I = 0.1mA 35 FE CE C V = 1V, I = 1mA 50 CE C V = 1V, I = 10mA 75 CE C V = 1V, I = 150mA 100 CE C V (sat) Collector-Emitter Saturation Voltage I = 150mA, I = 15mA 0.3 V CE C B I = 500mA, I = 50mA 1.0 V C B V (sat) Base-Emitter Saturation Voltage I = 150mA, I = 15mA 0.6 1.2 V BE C B I = 500mA, I = 50mA 2.0 V C B f Current Gain Bandwidth Product V = 20V, I = 20mA, f = 100MHz 300 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 1MHz 8 pF ob CB E C Input Capacitance V = 0.5V, I = 0, f = 1MHz 30 pF ib EB C t Delay Time V = 30V, I = 150mA 10 ns d CC C I =- I = 15mA t Rise Time B1 B2 25 ns r t Storage Time 225 ns s t Fall Time 60 ns f * DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2% 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT2222AT Rev. 1.0.0 1