X-On Electronics has gained recognition as a prominent supplier of MMBFJ309LT1G JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ309LT1G JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFJ309LT1G ON Semiconductor

MMBFJ309LT1G electronic component of ON Semiconductor
MMBFJ309LT1G ON Semiconductor
MMBFJ309LT1G JFET
MMBFJ309LT1G  Semiconductors

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See Product Specifications
Part No. MMBFJ309LT1G
Manufacturer: ON Semiconductor
Category: JFET
Description: SOT-23 JFETs ROHS
N-channel J-FET transistor with low-noise and high input impedance.
Datasheet: MMBFJ309LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0955 ea
Line Total: USD 286.5 
Availability - 46560
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
46560
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0955
6000 : USD 0.0927
9000 : USD 0.0914
12000 : USD 0.0897
27000 : USD 0.0886
51000 : USD 0.0881
102000 : USD 0.0878
150000 : USD 0.0872

2910
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1179
6000 : USD 0.1122
9000 : USD 0.0958
15000 : USD 0.0949
21000 : USD 0.0939
24000 : USD 0.093

8656
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 119
Multiples : 1
119 : USD 0.5482
300 : USD 0.2166
303 : USD 0.2144
426 : USD 0.1525
431 : USD 0.1509
500 : USD 0.1495
1000 : USD 0.1207
3000 : USD 0.1199
6000 : USD 0.1145

674
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2809
50 : USD 0.2205
150 : USD 0.1671
500 : USD 0.1254
3000 : USD 0.1144
6000 : USD 0.1077

2892
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.406
10 : USD 0.3178
25 : USD 0.2912
50 : USD 0.2674
100 : USD 0.1876

8656
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 303
Multiples : 1
303 : USD 0.2144
426 : USD 0.1525
431 : USD 0.1509
500 : USD 0.1495
1000 : USD 0.1207
3000 : USD 0.1199
6000 : USD 0.1145

11640
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1899

46560
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1291
6000 : USD 0.1206
9000 : USD 0.1188
12000 : USD 0.1166
27000 : USD 0.1152

2910
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1179
6000 : USD 0.1122
9000 : USD 0.0958
15000 : USD 0.0949
21000 : USD 0.0939
24000 : USD 0.093

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Configuration
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Drain-Source Current At Vgs 0
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Taric
Category
Brand Category
LoadingGif
 
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We are delighted to provide the MMBFJ309LT1G from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ309LT1G and other electronic components in the JFET category and beyond.

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The MMBFJ309LT1G is a N-Channel Junction Field Effect Transistor (JFET) produced by ON Semiconductor. It is designed for a wide range of general-purpose applications, such as amplifiers and switches, and it is a low cost, low noise device. This device has a drain–source voltage (Vds) of 30V, a drain–source on resistance (Rds on) of 1.8O (max) at Vgs = 0V, and a gate–source voltage (Vgs) (max) of ±30V. It also features fast switching speeds and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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