X-On Electronics has gained recognition as a prominent supplier of MMBFJ309LT1G JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ309LT1G JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFJ309LT1G ON Semiconductor

MMBFJ309LT1G electronic component of ON Semiconductor
MMBFJ309LT1G ON Semiconductor
MMBFJ309LT1G JFET
MMBFJ309LT1G  Semiconductors

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See Product Specifications
Part No. MMBFJ309LT1G
Manufacturer: ON Semiconductor
Category: JFET
Description: SOT-23 JFETs ROHS
N-channel J-FET transistor with low-noise and high input impedance.
Datasheet: MMBFJ309LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1251 ea
Line Total: USD 375.3 
Availability - 8730
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
46560
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1201
6000 : USD 0.1171
9000 : USD 0.1025
12000 : USD 0.1
27000 : USD 0.0975
51000 : USD 0.097
102000 : USD 0.0946
150000 : USD 0.0941

8641
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 121
Multiples : 1
121 : USD 0.5351
195 : USD 0.3325
198 : USD 0.3284
335 : USD 0.1939
339 : USD 0.1919
500 : USD 0.1802
1000 : USD 0.1521
3000 : USD 0.1162
6000 : USD 0.1042

3593
Ship by Thu. 17 Apr to Tue. 22 Apr
MOQ : 5
Multiples : 5
5 : USD 0.286
50 : USD 0.2245
150 : USD 0.1701
500 : USD 0.1276
3000 : USD 0.1165
6000 : USD 0.1096

6450
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 0.42
10 : USD 0.3332
25 : USD 0.3066
50 : USD 0.2814
100 : USD 0.1974

8641
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 198
Multiples : 1
198 : USD 0.3284
335 : USD 0.1939
339 : USD 0.1919
500 : USD 0.1802
1000 : USD 0.1521
3000 : USD 0.1162
6000 : USD 0.1042

46560
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1414
6000 : USD 0.1377
9000 : USD 0.1206
12000 : USD 0.1176
27000 : USD 0.1147

8730
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1251
6000 : USD 0.1191
9000 : USD 0.101
15000 : USD 0.1
21000 : USD 0.099
24000 : USD 0.098
30000 : USD 0.097
75000 : USD 0.0913

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Configuration
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Drain-Source Current At Vgs 0
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Taric
Category
Brand Category
LoadingGif
 
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We are delighted to provide the MMBFJ309LT1G from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ309LT1G and other electronic components in the JFET category and beyond.

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The MMBFJ309LT1G is a N-Channel Junction Field Effect Transistor (JFET) produced by ON Semiconductor. It is designed for a wide range of general-purpose applications, such as amplifiers and switches, and it is a low cost, low noise device. This device has a drain–source voltage (Vds) of 30V, a drain–source on resistance (Rds on) of 1.8O (max) at Vgs = 0V, and a gate–source voltage (Vgs) (max) of ±30V. It also features fast switching speeds and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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