X-On Electronics has gained recognition as a prominent supplier of MMBFJ309LT1G JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ309LT1G JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFJ309LT1G ON Semiconductor

MMBFJ309LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBFJ309LT1G
Manufacturer: ON Semiconductor
Category: JFET
Description: SOT-23 JFETs ROHS
N-channel J-FET transistor with low-noise and high input impedance.
Datasheet: MMBFJ309LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1052 ea
Line Total: USD 315.6 
Availability - 46560
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
46560
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1052
6000 : USD 0.102
9000 : USD 0.1003
12000 : USD 0.0975
27000 : USD 0.0958
51000 : USD 0.0944
102000 : USD 0.0929
150000 : USD 0.0915

2910
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1179
6000 : USD 0.1168
9000 : USD 0.1033
15000 : USD 0.1023
21000 : USD 0.1013
24000 : USD 0.1001
30000 : USD 0.0991
99000 : USD 0.0976

350
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2013
50 : USD 0.1604
150 : USD 0.1427
500 : USD 0.1208
3000 : USD 0.1111
6000 : USD 0.1052

3000
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.406
10 : USD 0.3206
25 : USD 0.294
50 : USD 0.2688
100 : USD 0.189
111 : USD 0.154
305 : USD 0.1456
500 : USD 0.1442
1000 : USD 0.14

71
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 71
Multiples : 1
71 : USD 0.1153

46560
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1288
6000 : USD 0.1248
9000 : USD 0.1229
12000 : USD 0.1193
27000 : USD 0.1171

2910
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1141
6000 : USD 0.113
9000 : USD 0.1033
15000 : USD 0.1023
21000 : USD 0.1013
24000 : USD 0.1002
30000 : USD 0.0992
45000 : USD 0.0987
75000 : USD 0.0967

11640
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.194

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Configuration
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Drain-Source Current At Vgs 0
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Taric
Category
Brand Category
LoadingGif
 
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We are delighted to provide the MMBFJ309LT1G from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ309LT1G and other electronic components in the JFET category and beyond.

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The MMBFJ309LT1G is a N-Channel Junction Field Effect Transistor (JFET) produced by ON Semiconductor. It is designed for a wide range of general-purpose applications, such as amplifiers and switches, and it is a low cost, low noise device. This device has a drain–source voltage (Vds) of 30V, a drain–source on resistance (Rds on) of 1.8O (max) at Vgs = 0V, and a gate–source voltage (Vgs) (max) of ±30V. It also features fast switching speeds and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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