X-On Electronics has gained recognition as a prominent supplier of MMBFJ108 JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ108 JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFJ108 ON Semiconductor

MMBFJ108 electronic component of ON Semiconductor
MMBFJ108 ON Semiconductor
MMBFJ108 JFET
MMBFJ108  Semiconductors

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See Product Specifications
Part No. MMBFJ108
Manufacturer: ON Semiconductor
Category: JFET
Description: JFET N-Channel Switch
Datasheet: MMBFJ108 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1784 ea
Line Total: USD 535.2 
Availability - 2910
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.1784
6000 : USD 0.1736
9000 : USD 0.1693
12000 : USD 0.1668
27000 : USD 0.163
51000 : USD 0.1605
102000 : USD 0.1581

1917
Ship by Tue. 25 Mar to Fri. 28 Mar
MOQ : 1
Multiples : 1
1 : USD 0.7168
10 : USD 0.5638
30 : USD 0.4982
100 : USD 0.3206
500 : USD 0.2926
1000 : USD 0.2736

1671
Ship by Fri. 14 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 0.658
10 : USD 0.5348
25 : USD 0.4494
58 : USD 0.3192
157 : USD 0.3024

2910
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2219

107670
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.3866

2910
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2319
6000 : USD 0.2258
9000 : USD 0.22
12000 : USD 0.2167
27000 : USD 0.2119

2910
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 285
Multiples : 1
285 : USD 0.2284
3000 : USD 0.19

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Drain-Source Current At Vgs 0
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Operating Temperature Range
Type
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBFJ108 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ108 and other electronic components in the JFET category and beyond.

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N-Channel JFET J109, MMBFJ108 Features This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory Sourced from Process 58 www.onsemi.com These are PbFree Devices MAXIMUM RATINGS (T = 25C unless otherwise specified) (Notes 1, 2) A Symbol Parameter Value Unit V DrainGate Voltage 25 V DG V GateSource Voltage 25 V 1 GS I Forward Gate Current 10 mA GF TO92 3 4.825x4.76 T , T Operating and Storage Junction 55 to 150 C J STG CASE 135AN Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed or lowdutycycle operations. 1 THERMAL CHARACTERISTICS (T = 25C unless otherwise specified) A TO92 3 4.83x4.76 Max LEADFORMED J109 MMBFJ108 CASE 135AR (Note 3) (Note 4) Symbol Parameter Unit P Total Device Dissipation 625 350 mW D 3 Derate Above 25C 5.0 2.8 mW/C 1 Thermal Resistance, 125 C/W R JC 2 JunctiontoCase SOT23/SUPERSOT 23, R Thermal Resistance, 200 357 C/W JA 3 LEAD, 1.4x2.9 JunctiontoAmbient CASE 527AG 3. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 1. Drain, 2. Source, 3. Gate 4. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for 2 the collector lead minimum 6 cm . MARKING DIAGRAM Y&Z&3&K Y&Z&3 J109 J109 &Y I8 &G J109 J109D26Z MMBFJ108 J109, I8 = Specific Device Code Y = ON Semiconductor Logo &Y = Year Coding &G = Weekly Date Code &Z = Assembly Plant Code &3 = Date Code Format &K = Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: December, 2020 Rev. 4 J109/DJ109, MMBFJ108 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 10 A, V = 0 25 V (BR)GSS G DS I Gate Reverse Current nA V = 15 V, V = 0 3.0 GSS GS DS V = 15 V, V = 0, T = 100C 200 GS DS A V (off) GateSource CutOff Voltage V = 15 V, I = 10 nA MMBFJ108 3.0 10.0 V GS DS D J109 2.0 6.0 ON CHARACTERISTICS I ZeroGate Voltage Drain Current (Note 5) V = 15 V, V = 0 MMBFJ108 80 mA DSS DS GS J109 40 r (on) DrainSource On Resistance V 0.1 V, V = 0 MMBFJ108 8.0 DS DS GS J109 12 SMALL SIGNAL CHARACTERISTICS C (on) DrainGate & SourceGate On Capacitance V = 0, V = 0, f = 1.0 MHz 85 pF dg DS GS C (off) sg C (off) DrainGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 15 pF dg DS GS C (off) SourceGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 15 pF sg DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width 300 s, duty cycle 2%. TYPICAL PERFORMANCE CHARACTERISTICS 300 V = 10 mV GS Unit with Typical V = 500 mV GS V (off) = 7.8 V GS V = 1.0 V T = 25C GS A 250 V = 1.5 V GS V = 2.0 V GS V = 2.5 V GS 200 V = 3.0 V GS V = 3.5 V GS V = 4.0 V 150 GS V = 4.5 V GS 100 V = 5.0 V GS V = 5.5 V GS 50 V = 6.5 V GS V = 6.0 V GS V = 7.0 V GS 0 012 345 6789 10 11 12 13 14 15 V , DRAIN SOURCE VOLTAGE (V) DS Figure 1. Common Drain Source, MMBFJ108 www.onsemi.com 2 I , DRAIN CURRENT (mA) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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