2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number V (V) V Min (V) g Min (mS) I Min (mA) GS(off) (BR)GSS fs DSS 2N/SST5484 0.3 to 3 25 3 1 2N/SST5485 0.5 to 4 25 3.5 4 2N/SST5486 2 to 6 25 4 8 FEATURES BENEFITS APPLICATIONS Excellent High-Frequency Gain: Wideband High Gain High-Frequency Amplifier/Mixer Gps 13 dB (typ) 400 MHz 5485/6 Very High System Sensitivity Oscillator Very Low Noise: 2.5 dB (typ) High Quality of Amplification Sample-and-Hold 400 MHz 5485/6 High-Speed Switching Capability Very Low Capacitance Switches Very Low Distortion High Low-Level Signal Amplification High AC/DC Switch Off-Isolation DESCRIPTION The 2N/SST5484 series consists of n-channel JFETs The 2N series, TO-226AA (TO-92), and SST series, TO-236 designed to provide high-performance amplification, (SOT-23), packages provide low-cost options and are especially at high frequencies up to and beyond 400 MHz. available with tape-and-reel to support automated assembly (see Packaging Information). TO-236 TO-226AA (SOT-23 (TO-92) ) 1 D D 1 3 G S 2 S 2 G 3 Top View SST5484 (H4)* SST5485 (H5)* Top View SST5486 (H6)* 2N5484 2N5485 *Marking Code for TO-236 2N5486 For applications information see AN102 and AN105. Document Number: 70246 www.vishay.com S-50148Rev. G, 24-Jan-05 12N/SST5484 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . 25 V Operating Junction Temperature 55 to 150 C Gate Current . 10 mA a Power Dissipation . 350 mW Lead Temperature 300 C Notes Storage Temperature . 65 to 150 C a. Derate 2.8 mW/ C above 25 C SPECIFICATIONS FOR 2N SERIES (T = 25 C UNLESS OTHERWISE NOTED) A Limits 2N5484 2N5485 2N5486 a Parameter Symbol Test Conditions Typ Min Max Min Max Min Max Unit Static Gate-Source V 35 25 25 25 I = 1 A , V = 0 V (BR)GSS G DS Breakdown Voltage VV Gate-Source Cutoff Voltage V V = 15 V, I = 10 nA 0.3 3 0.5 4 2 6 GS(off) DS D b Saturation Drain Current I V = 15 V, V = 0 V 1 5 4 10 8 20 mA DSS DS GS V = 20 V, V = 0 V 0.002 1 1 1 GS DS Gate Reverse CurrentGate Reverse Current II nAnA GSGSSS T = 100 C 0.2 200 200 200 A c Gate Operating Current I V = 10 V, I = 1 mA 20 pA G DG D Gate-Source V I = 10 mA , V = 0 V 0.8 V c GS(F) G DS Forward Voltage Dynamic Common-Source g 3 6 3.5 7 4 8 mS fs NO TAG Forward Transconductance VV = 15 V = 15 V,, V V = 0 V = 0 V DSDS GSGS f = 1 kHz Common-Source g 50 60 75 S NO TAG os Output Conductance Common-Source C 2.2 5 5 5 iss Input Capacitance Common-Source V = 15 V, V = 0 V DS GS C 0.7 1 1 1 pF rss Reverse Transfer Capacitance f = 1 MHz Common-Source C 1 2 2 2 oss Output Capacitance Equivalent Input V = 15 V, V = 0 V nV DS GS e 10 c n Noise Voltage f = 100 Hz Hz High-Frequency f = 100 MHz 5.5 2.5 Common-SourceCommon-Source YY mSmS dd fsf((RREE)) Transconductance f = 400 MHz 5.5 3 3.5 f = 100 MHz 45 75 Common-SourceCommon-Source VV = 15 V = 15 V DSDS YY SS dd os((RREE)) Output Conductance V = 0 V GS f = 400 MHz 65 100 100 f = 100 MHz 0.05 0.1 Common-SourceCommon-Source YY mSmS dd i(is(RRE)E) Input Conductance f = 400 MHz 0.8 1 1 V = 15 V, I = 1 mA DS D 20 16 25 f = 100 MHz dd Common-Source Power GainCS P G i GG ps f = 100 MHz 21 18 30 18 30 VV = 15 V = 15 V DSDS I = 4 mA D f = 400 MHz 13 10 20 10 20 V = 15 V, V = 0 V DS GS 0.3 2.5 2.5 2.5 dB R = 1 M , f = 1 kHz G V = 15 V, I = 1 mA DS D 2 3 d R = 1 k , f = 100 MHz Noise Figureg NF G V = 15 V f = 100 MHz 1 2 2 DS II = 4 mA= 4 mA DD f = 400 MHz 2.5 4 4 R = 1 k G Document Number: 70246 www.vishay.com S-50148Rev. G, 24-Jan-05 2