N-Channel JFET MMBFJ110 Features This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory Sourced from Process 58 www.onsemi.com This is a PbFree Device 3 MAXIMUM RATINGS (T = 25C unless otherwise specified) (Notes 1, 2) A Symbol Parameter Value Unit 1 2 V DrainGate Voltage 25 V DG SOT23/SUPERSOT 23, V GateSource Voltage 25 V GS 3 LEAD, 1.4x2.9 CASE 527AG I Forward Gate Current 10 mA GF 1. Drain, 2. Source, 3. Gate T Junction Temperature 150 C J T , T Storage Temperature Range 55 to 150 C J STG MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Y 1. These ratings are based on a maximum junction temperature of 150C. 110 &G 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed or lowdutycycle operations. 110 = Specific Device Code THERMAL CHARACTERISTICS (T = 25C unless otherwise specified) A &Y = Year Coding (Note 3) &G = Weekly Date Code Symbol Parameter Max Unit P Total Device Dissipation 460 mW ORDERING INFORMATION D See detailed ordering and shipping information on page 4 of Derate Above 25C 3.68 mW/C this data sheet. R Thermal Resistance, JunctiontoAmbient 270 C/W JA 3. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for 2 the collector lead minimum 6 cm . Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: December, 2020 Rev. 2 MMBFJ110/DMMBFJ110 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 10 A, V = 0 25 V (BR)GSS G DS I Gate Reverse Current nA V = 15 V, V = 0 3.0 GSS GS DS V = 15 V, V = 0, T = 100C 200 GS DS A V (off) GateSource CutOff Voltage V = 15 V, I = 10 nA 0.5 4.0 V GS DS D ON CHARACTERISTICS I ZeroGate Voltage Drain Current (Note 4) V = 15 V, V = 0 10 mA DSS DS GS r (on) DrainSource On Resistance V 0.1 V, V = 0 18 DS DS GS SMALL SIGNAL CHARACTERISTICS C (on) DrainGate & SourceGate On Capacitance V = 0, V = 0, f = 1.0 MHz 85 pF dg DS GS C (on) sg C (off) DrainGate & SourceGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 15 pF dg DS GS C (off) sg Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test: pulse width 300 s, duty cycle 2%. TYPICAL PERFORMANCE CHARACTERISTICS 250 T = 25C A TYP VGS(off) = 2.9 V 200 V = 0.1 V GS 150 0.5 V 100 1.0 V 50 1.5 V 2.0 V 0 01 23 45 678 9 10 11 12 13 14 15 V , DRAIN SOURCE VOLTAGE (V) DS Figure 1. Common DrainSource www.onsemi.com 2 I , DRAIN CURRENT (mA) D