X-On Electronics has gained recognition as a prominent supplier of MMBFJ110 JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ110 JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFJ110 ON Semiconductor

MMBFJ110 electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBFJ110
Manufacturer: ON Semiconductor
Category: JFET
Description: JFET N-CH FET/SSOT-23
Datasheet: MMBFJ110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1586 ea
Line Total: USD 475.8 
Availability - 32010
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
32010
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1586
6000 : USD 0.156
9000 : USD 0.1547
12000 : USD 0.1547
15000 : USD 0.1521

707
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.3468
50 : USD 0.276
150 : USD 0.2456
500 : USD 0.2078
3000 : USD 0.1907
6000 : USD 0.1807

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Continuous Drain Current
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBFJ110 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ110 and other electronic components in the JFET category and beyond.

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N-Channel JFET MMBFJ110 Features This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory Sourced from Process 58 www.onsemi.com This is a PbFree Device 3 MAXIMUM RATINGS (T = 25C unless otherwise specified) (Notes 1, 2) A Symbol Parameter Value Unit 1 2 V DrainGate Voltage 25 V DG SOT23/SUPERSOT 23, V GateSource Voltage 25 V GS 3 LEAD, 1.4x2.9 CASE 527AG I Forward Gate Current 10 mA GF 1. Drain, 2. Source, 3. Gate T Junction Temperature 150 C J T , T Storage Temperature Range 55 to 150 C J STG MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. &Y 1. These ratings are based on a maximum junction temperature of 150C. 110 &G 2. These are steady state limits. ON Semiconductor should be consulted on applications involving pulsed or lowdutycycle operations. 110 = Specific Device Code THERMAL CHARACTERISTICS (T = 25C unless otherwise specified) A &Y = Year Coding (Note 3) &G = Weekly Date Code Symbol Parameter Max Unit P Total Device Dissipation 460 mW ORDERING INFORMATION D See detailed ordering and shipping information on page 4 of Derate Above 25C 3.68 mW/C this data sheet. R Thermal Resistance, JunctiontoAmbient 270 C/W JA 3. Device mounted on FR4 PCB 36 mm x 18 mm x 1.5 mm mounting pad for 2 the collector lead minimum 6 cm . Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: December, 2020 Rev. 2 MMBFJ110/DMMBFJ110 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 10 A, V = 0 25 V (BR)GSS G DS I Gate Reverse Current nA V = 15 V, V = 0 3.0 GSS GS DS V = 15 V, V = 0, T = 100C 200 GS DS A V (off) GateSource CutOff Voltage V = 15 V, I = 10 nA 0.5 4.0 V GS DS D ON CHARACTERISTICS I ZeroGate Voltage Drain Current (Note 4) V = 15 V, V = 0 10 mA DSS DS GS r (on) DrainSource On Resistance V 0.1 V, V = 0 18 DS DS GS SMALL SIGNAL CHARACTERISTICS C (on) DrainGate & SourceGate On Capacitance V = 0, V = 0, f = 1.0 MHz 85 pF dg DS GS C (on) sg C (off) DrainGate & SourceGate Off Capacitance V = 0, V = 10 V, f = 1.0 MHz 15 pF dg DS GS C (off) sg Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test: pulse width 300 s, duty cycle 2%. TYPICAL PERFORMANCE CHARACTERISTICS 250 T = 25C A TYP VGS(off) = 2.9 V 200 V = 0.1 V GS 150 0.5 V 100 1.0 V 50 1.5 V 2.0 V 0 01 23 45 678 9 10 11 12 13 14 15 V , DRAIN SOURCE VOLTAGE (V) DS Figure 1. Common DrainSource www.onsemi.com 2 I , DRAIN CURRENT (mA) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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