X-On Electronics has gained recognition as a prominent supplier of SUP85N10-10-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUP85N10-10-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUP85N10-10-E3 Vishay

Hot SUP85N10-10-E3 electronic component of Vishay
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Part No.SUP85N10-10-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3
Datasheet: SUP85N10-10-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3049 ea
Line Total: USD 3.3 
Availability - 707
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
707
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 1
Multiples : 1
1 : USD 3.3049
10 : USD 2.8069
50 : USD 2.5112
100 : USD 2.2116
500 : USD 2.0724
1000 : USD 2.0094

857
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 5.786
25 : USD 3.41
100 : USD 3.41
500 : USD 3.267
2500 : USD 3.19
5000 : USD 3.168

348
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 7.308
7 : USD 2.744
18 : USD 2.59

485
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 5
Multiples : 1
5 : USD 6.4877
25 : USD 4.1281
100 : USD 3.8918
500 : USD 3.6041
1000 : USD 3.5931
2500 : USD 3.5199

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUP85N10-10-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP85N10-10-E3 and other electronic components in the MOSFETs category and beyond.

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SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( )I (A) DS DS(on) D 175 C Maximum Junction Temperature 0.0105 at V = 10 V GS a Compliant to RoHS Directive 2002/95/EC 100 85 0.012 at V = 4.5 V GS TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S GD S SUB85N10-10 Top View N-Channel MOSFET SUP85N10-10 ORDERING INFORMATION Package Lead (Pb)-free TO-220AB SUP85N10-10-E3 TO-263 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 100 DS V V Gate-Source Voltage 20 GS a T = 25 C 85 C Continuous Drain Current (T = 150 C) I D J a T = 125 C 60 C A I Pulsed Drain Current 240 DM I Avalanche Current 75 AS L = 0.1 mH b mJ E Single Pulse Avalanche Energy 280 AS c T = 25 C (TO-220AB and TO-263) 250 C b P W Maximum Power Dissipation D d T = 25 C (TO-263) 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit d 40 PCB Mount (TO-263) Junction-to-Ambient R thJA 62.5 C/W Free Air (TO-220AB) R Junction-to-Case thJC 0.6 Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1 square PCB (FR-4 material). Document Number: 71141 www.vishay.com S10-0107-Rev. E, 18-Jan-10 1SUP85N10-10, SUB85N10-10 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 DS GS D V V V = V , I = 250 A Gate-Threshold Voltage 13 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I V = 100 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 100 V, V = 0 V, T = 175 C 250 DS GS J a I V = 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.0085 0.0105 GS D V = 4.5 V, I = 20 A 0.010 0.012 GS D a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 30 A, T = 125 C 0.017 GS D J V = 10 V, I = 30 A, T = 175 C 0.022 GS D J a g V = 15 V, I = 30 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6550 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 665 pF oss GS DS Reverse Transfer Capacitance C 265 rss c Q 105 160 Total Gate Charge g c Q V = 50 V, V = 10 V, I = 85 A 17 nC Gate-Source Charge gs DS GS D c Q 23 Gate-Drain Charge gd c t 12 25 Turn-On Delay Time d(on) c t 90 135 Rise Time V = 50 V, R = 0.6 r DD L ns c I 85 A, V = 10 V, R = 2.5 t D GEN g 55 85 Turn-Off DelayTime d(off) c t 130 195 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 85 S A I Pulsed Current 240 SM a V I = 85 A, V = 0 V 1.0 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 85 140 ns rr I I = 50 A, dI/dt = 100 A/s Peak Reverse Recovery Current 4.5 7 A RM(REC) F C Q Reverse Recovery Charge 0.17 0.35 rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71141 2 S10-0107-Rev. E, 18-Jan-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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