SUP90P06-09L Vishay Siliconix P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET c V (V) R ( ) DS DS(on) I (A) D Compliant to RoHS Directive 2002/95/EC RoHS 0.0093 at V = - 10 V - 90 GS COMPLIANT - 60 0.0118 at V = - 4.5 V - 90 GS APPLICATIONS DC/DC Primary Switch TO-220AB S G Drain connected to Tab GD S Top View D Ordering Information: SUP90P06-09L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit V Drain-Source Voltage - 60 DS V V Gate-Source Voltage 20 GS T = 25 C - 90 C c I Continuous Drain Current (T = 175 C) D J T = 125 C - 67 C A Pulsed Drain Current I - 200 DM I Avalanche Current - 65 AS L = 0.1 mH a E 211 mJ Single Pulse Avalanche Energy AS b T = 25 C C 250 P Power Dissipation W D T = 25 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit R Junction-to-Ambient Free Air 62 thJA C/W R Junction-to-Case 0.6 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 www.vishay.com S10-2545-Rev. B, 08-Nov-10 1SUP90P06-09L Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 DS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 1 - 3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS I V = - 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 60 V, V = 0 V, T = 175 C - 250 DS GS J a I V = - 5 V, V = - 10 V - 120 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 30 A 0.0074 0.0093 GS D V = - 10 V, I = - 30 A, T = 125 C 0.0150 GS D J a R Drain-Source On-State Resistance DS(on) V = - 10 V, I = - 30 A, T = 175 C 0.0190 GS D J V = - 4.5 V, I = - 20 A 0.0094 0.0118 GS D a g V = - 15 V, I = - 30 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 9200 iss C V = 0 V, V = - 25 V, f = 1 MHz Output Capacitance 975 pF oss GS DS Reverse Transfer Capacitance C 760 rss c Q 160 240 Total Gate Charge g c Q V = - 30 V, V = - 10 V, I = - 90 A 40 nC Gate-Source Charge gs DS GS D c Q 36 gd Gate-Drain Charge R Gate Resistance f = 1.0 MHz 3 g c t 20 30 Turn-On Delay Time d(on) c t V = - 30 V, R = 0.33 190 285 Rise Time r DD L ns c I - 90 A, V = - 10 V, R = 2.5 t D GEN g 140 210 Turn-Off Delay Time d(off) c t 300 450 Fall Time f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C Continuous Current I - 90 S A I Pulsed Current - 200 SM a V I = - 50 A, V = 0 V - 1.0 - 1.5 V Forward Voltage SD F GS Reverse Recovery Time t 60 90 ns rr I I = - 50 A, dI/dt = 100 A/s Peak Reverse Recovery Current - 3 - 4.5 A RM(REC) F Reverse Recovery Charge Q 0.09 0.2 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73010 2 S10-2545-Rev. B, 08-Nov-10