SUM90N08-4m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) Q (Typ) (BR)DSS DS(on) D g 175 C Junction Temperature d 0.0048 at V = 10 V RoHS 90 GS 75 105 100 % UIS Tested COMPLIANT d 0.006 at V = 8 V GS 90 APPLICATIONS Power Supply - Half-Bridge - Secondary Synchronous Rectification Industrial TO-263 D G D S G Top View Ordering Information: SUM90N08-4m8P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 75 DS V V Gate-Source Voltage 20 GS d T = 25 C C 90 Continuous Drain Current (T = 175 C) I J D d T = 70 C C 90 A Pulsed Drain Current I 240 DM I Avalanche Current 70 AS a L = 0.1 mH E 245 mJ Single Pulse Avalanche Energy AS b T = 25 C C 300 a P W Maximum Power Dissipation D c T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 0.5 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 74458 www.vishay.com S-71663-Rev. C, 06-Aug-07 1SUM90N08-4m8P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Typ Parameter Symbol Test Conditions Min Max Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 75 (BR)DSS DS D V V V = V , I = 250 A Gate Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 75 V, V = 0 V 1 DS GS I V = 75 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 75 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 70 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.004 0.0048 GS D V = 10 V, I = 20 A, T = 125 C 0.0096 GS D J a r Drain-Source On-State Resistance DS(on) V = 8 V, I = 20 A, T = 150 C 0.0106 GS D J V = 8 V, I = 20 A 0.0046 0.006 GS D a g V = 15 V, I = 20 A 58 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6460 iss Output Capacitance C V = 0 V, V = 40 V, f = 1 MHz 571 pF oss GS DS C Reverse Transfer Capacitance 275 rss c Q 105 160 Total Gate Charge g c Q V = 30 V, V = 10 V, I = 85 A Gate-Source Charge 32 nC gs DS GS D c Q 28 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 1.3 2.6 g c t 23 35 Turn-On Delay Time d(on) c t Rise Time V = 30 V, R = 0.4 17 26 r DD L ns c I 85 A, V = 10 V, R = 1 t D GEN g 34 52 Turn-Off Delay Time d(off) c t Fall Time 815 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C I Continuous Current 85 S A I Pulsed Current 240 SM a V I = 30 A, V = 0 V 0.85 1.5 V Forward Voltage SD F GS Reverse Recovery Time t 68 100 ns rr I I = 75 A, di/dt = 100 A/s Peak Reverse Recovery Current 2.6 4 A RM(REC) F Reverse Recovery Charge Q 88 132 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74458 2 S-71663-Rev. C, 06-Aug-07