X-On Electronics has gained recognition as a prominent supplier of SUM90140E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUM90140E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUM90140E-GE3 Vishay

SUM90140E-GE3 electronic component of Vishay
SUM90140E-GE3 Vishay
SUM90140E-GE3 MOSFETs
SUM90140E-GE3  Semiconductors

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See Product Specifications
Part No. SUM90140E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
Datasheet: SUM90140E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
21: USD 3.1174 ea
Line Total: USD 65.47 
Availability - 562
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ: 21  Multiples: 1
Pack Size: 1
Availability Price Quantity
562
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 21
Multiples : 1
21 : USD 3.1174

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUM90140E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUM90140E-GE3 and other electronic components in the MOSFETs category and beyond.

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SUM90140E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.017 at V = 10 V 90 GS 200 64 nC 100 % R and UIS tested g 0.018 at V = 7.5 V 88 GS Material categorization: for definitions of compliance please see TO-263 www.vishay.com/doc 99912 APPLICATIONS D Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting SS G Synchronous rectification DD GG DC/DC converter Top View Motor drive switch Ordering Information: S DC/AC inverter SUM90140E-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET Solar micro inverter Class D audio amplifier ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 90 C Continuous Drain Current (T = 150 C) I J D T = 70 C 75 C A Pulsed Drain Current (t = 100 s) I 240 DM Avalanche Current I 60 AS L = 0.1 mH a Single Avalanche Energy E 180 mJ AS b T = 25 C 375 C a Maximum Power Dissipation P W D b T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). S15-2641-Rev. A, 16-Nov-15 Document Number: 79035 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM90140E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 200 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 200 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 200 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 90 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0138 0.0170 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 30 A - 0.0141 0.0180 GS D a Forward Transconductance g V = 15 V, I = 30 A - 75 - S fs DS D b Dynamic Input Capacitance C - 4132 - iss Output Capacitance C V = 0 V, V = 100 V, f = 1 MHz - 246 - pF oss GS DS Reverse Transfer Capacitance C -21- rss c Total Gate Charge Q -64 96 g c Gate-Source Charge Q V = 100 V, V = 10 V, I = 60 A - 16.7 - nC gs DS GS D c Gate-Drain Charge Q -16.9- gd Gate Resistance R f = 1 MHz 1.5 3 5 g c Turn-On Delay Time t -13 26 d(on) c Rise Time t - 112 200 r V = 100 V, R = 1.66 DD L ns I 60 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -3570 d(off) c Fall Time t -80 150 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 240 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.8 1.2 V SD F GS Reverse Recovery Time t - 160 320 ns rr Peak Reverse Recovery Charge I I = 30 A, di/dt = 100 A/s -11 20 A RM(REC) F Reverse Recovery Charge Q -0.9 1.8 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2641-Rev. A, 16-Nov-15 Document Number: 79035 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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