SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g and UIS tested 100 % R g 0.0033 at V = 10 V 90 GS 40 87 Material categorization: For definitions of 0.0041 at V = 4.5 V 90 GS compliance please see www.vishay.com/doc 99912 APPLICATIONS D Power supply TO-263 - Secondary synchronous rectification DC/DC converter Power tools G SS S DD GG Top View N-Channel MOSFET Ordering Information: SUM90N04-3m3P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS d T = 25 C 90 C Continuous Drain Current (T = 150 C) I J D d T = 70 C 90 C A Pulsed Drain Current (t = 300 s) I 160 DM Avalanche Current I 60 AS a Single Avalanche Energy L = 0.1 mH E 180 mJ AS b T = 25 C 125 C a Maximum Power Dissipation P W D c T = 25 C 3.1 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 1 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Package limited. S13-2462-Rev. B, 02-Dec-13 Document Number: 63397 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUM90N04-3m3P www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 1 - 2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 40 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I V = 40 V, V = 0 V, T = 125 C - - 50 A DSS DS GS J V = 40 V, V = 0 V, T = 150 C - - 250 DS GS J a On-State Drain Current I V 10 V, V = 10 V 50 - - A D(on) DS GS V = 10 V, I = 22 A - 0.0027 0.0033 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 20 A - 0.0034 0.0041 GS D a Forward Transconductance g V = 15 V, I = 20 A - 169 - S fs DS D b Dynamic Input Capacitance C - 5286 - iss Output Capacitance C V = 0 V, V = 20 V, f = 1 MHz - 705 - pF oss GS DS Reverse Transfer Capacitance C - 283 - rss c Total Gate Charge Q -87 131 g c Gate-Source Charge Q V = 20 V, V = 10 V, I = 20 A - 15.3 - nC gs DS GS D c Gate-Drain Charge Q -12.2- gd Gate Resistance R f = 1 MHz 0.5 2.7 5.4 g c Turn-On Delay Time t -11 20 d(on) c Rise Time t -7 14 r V = 20 V, R = 2 DD L ns I 10 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -4568 d(off) c Fall Time t -7 14 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Continuous Current I -- 90 S A Pulsed Current I -- 160 SM a Forward Voltage V I = 10 A, V = 0 V - 0.72 1.2 V SD F GS Reverse Recovery Time t -42 63 ns rr Peak Reverse Recovery Current I I = 10 A, dI/dt = 100 A/s -2.5 3.8 A RM(REC) F Reverse Recovery Charge Q -52 78 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2462-Rev. B, 02-Dec-13 Document Number: 63397 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000