SUP50N10-21P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( ) Max. Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g d 0.021 at V = 10 V Material categorization: GS 50 For definitions of compliance please see 100 0.023 at V = 8 V 49.7 30.2 nC GS www.vishay.com/doc 99912 0.028 at V = 6 V 45 GS APPLICATIONS TO-220AB DC/AC Inverters Primary Side Switching Synchronous Rectification D G GD S Top View Ordering Information: S SUP50N10-21P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS d T = 25 C C 50 Continuous Drain Current (T = 150 C) I J D T = 70 C C 41.6 A Pulsed Drain Current (t = 300 s) I 60 DM I Avalanche Current 40 AS a L = 0.1 mH E 80 mJ Single Avalanche Energy AS b T = 25 C 125 C a P W Maximum Power Dissipation D c T = 25 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 1 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 62781 www.vishay.com For technical questions, contact:: pmostechsupport vishay.com S12-2730-Rev. A, 12-Nov-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP50N10-21P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I V = 100 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 100 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.017 0.021 GS D a R V = 8 V, I = 9.6 A 0.019 0.023 Drain-Source On-State Resistance DS(on) GS D V = 6 V, I = 8.7 A 0.022 0.028 GS D a g V = 20 V, I = 10 A Forward Transconductance 40 S fs DS D b Dynamic Input Capacitance C 2055 iss C V = 0 V, V = 50 V, f = 1 MHz Output Capacitance 227 pF oss GS DS Reverse Transfer Capacitance C 120 rss c Q Total Gate Charge 45 68 g c Q V = 50 V, V = 10 V, I = 10 A 10.5 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 15.9 gd R Gate Resistance f = 1 MHz 0.3 1.5 3 g c t Turn-On Delay Time 10 20 d(on) c t V = 20 V, R = 2 10 20 Rise Time r DD L ns c I 8 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 33 d(off) c t 714 Fall Time f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C I Continuous Current 50 S A I Pulsed Current 60 SM a V I = 8 A, V = 0 V 0.75 1.2 V Forward Voltage SD F GS t Reverse Recovery Time 55 83 ns rr I I = 8 A, dI/dt = 100 A/s Peak Reverse Recovery Current 4.1 6.2 A RM(REC) F Q Reverse Recovery Charge 107 161 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 62781 For technical questions, contact:: pmostechsupport vishay.com 2 S12-2730-Rev. A, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000