SUP60N06-12P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition d 60 0.012 at V = 10 V 33 GS 60 TrenchFET Power MOSFET 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS T O-220AB Synchronous Rectifier Power Supplies D G GD S Top View S Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free) SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage V 60 DS V V Gate-Source Voltage 20 GS d T = 25 C C 60 Continuous Drain Current (T = 150 C) I J D d T = 70 C C 54 A Pulsed Drain Current I 80 DM I Avalanche Current 40 AS a L = 0.1 mH E 80 mJ Single Avalanche Energy AS b T = 25 C C 100 a P W Maximum Power Dissipation D c T = 25 C 3.25 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 1.25 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 69070 www.vishay.com S10-1475-Rev. C, 05-Jul-10 1SUP60N06-12P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 DS DS D V V V = V , I = 250 A Gate Threshold Voltage 2.5 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I V = 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 60 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 80 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.0098 0.012 GS D a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 30 A, T = 125 C 0.0155 0.019 GS D J a g V = 15 V, I = 15 A 37 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1970 iss Output Capacitance C V = 0 V, V = 30 V, f = 1 MHz 310 pF oss GS DS C Reverse Transfer Capacitance 110 rss c Q 33 55 Total Gate Charge g c Q V = 30 V, V = 10 V, I = 20 A Gate-Source Charge 11 nC gs DS GS D c Q 9 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 0.3 1.4 2.8 g c t 11 20 Turn-On Delay Time d(on) c t Rise Time V = 30 V, R = 1.53 11 20 r DD L ns c I 20 A, V = 10 V, R = 1 t D GEN g 16 30 Turn-Off Delay Time d(off) c t Fall Time 815 f b Source-Drain Diode Ratings and Characteristics T = 25 C C Continuous Current I 60 S A I Pulsed Current 80 SM a V I = 10 A, V = 0 V 0.84 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 40 80 ns rr I I = 10 A, dI/dt = 100 A/s Peak Reverse Recovery Current 3.2 5.0 A RM(REC) F Q Reverse Recovery Charge 64 120 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69070 2 S10-1475-Rev. C, 05-Jul-10