SUP53P06-20 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) I (A) DS DS(on) g D 100 % UIS Tested 0.0195 at V = - 10 V - 53 Material categorization: GS - 60 76 nC For definitions of compliance please see 0.0250 at V = - 4.5 V - 42 GS www.vishay.com/doc 99912 TO-220AB APPLICATIONS S Load Switch G DRAIN connected to T A B GD S D Top View P-Channel MOSFET Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free) SUP53P06-20-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 60 DS V V Gate-Source Voltage 20 GS a T = 25 C C - 53 T = 70 C - 46.8 C Continuous Drain Current (T = 150 C) I J D b T = 25 C A 9.2 A b T = 70 C A - 8.1 I Pulsed Drain Current - 150 DM Avalanche Current Pulse I - 45 AS L = 0.1 mH E Single Pulse Avalanche Energy 101 mJ AS a T = 25 C C 69 I Continuous Source-Drain Diode Current A S b T = 25 C A 2.1 a T = 25 C C 104.2 a T = 70 C C 66.7 P Maximum Power Dissipation W D b T = 25 C 3.1 A b T = 70 C 2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b R Maximum Junction-to-Ambient Steady State 33 40 thJA C/W Maximum Junction-to-Case Steady State R thJC 0.98 1.2 Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. Document Number: 68633 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2440-Rev. B, 15-Oct-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP53P06-20 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V DS GS D V Temperature Coefficient V /T 68 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 5.2 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 60 V, V = 0 V, T = 55 C - 10 DS GS J a I V =-5 V, V = - 10 V On-State Drain Current - 120 A D(on) DS GS V = - 10 V, I = - 30 A 0.0160 0.0195 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 20 A 0.0200 0.0250 GS D a g V = - 15 V, I = - 50 A 20 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3500 iss Output Capacitance C V = - 25 V, V = 0 V, f = 1 MHz 390 pF oss DS GS C Reverse Transfer Capacitance 290 rss V = - 30 V, V = - 10 V, I = - 55 A 76 115 DS GS D Total Gate Charge Q g 38 60 nC Q Gate-Source Charge V = - 30 V, V = - 4.5 V, I = - 55 A 16 gs DS GS D Gate-Drain Charge Q 19 gd R Gate Resistance f = 1 MHz 5.2 g t Turn-On Delay Time 10 15 d(on) t Rise Time V = - 2 V, R = 2 715 r DD L ns I - 10 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 70 110 d(off) t Fall Time 40 60 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 69 S C A a I Pulse Diode Forward Current - 150 SM V I = - 30 A Body Diode Voltage - 1 - 1.5 V SD S Body Diode Reverse Recovery Time t 45 68 ns rr Q Body Diode Reverse Recovery Charge 59 120 nC rr I = - 50 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 29 a ns t Reverse Recovery Rise Time 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 68633 2 S12-2440-Rev. B, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000