X-On Electronics has gained recognition as a prominent supplier of SUP70060E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUP70060E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUP70060E-GE3 Vishay

SUP70060E-GE3 electronic component of Vishay
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See Product Specifications
Part No.SUP70060E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V Vds 20V Vgs TO-220
Datasheet: SUP70060E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 1.459 ea
Line Total: USD 729.5 
Availability - 0
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 500
Multiples : 1
500 : USD 1.459
1000 : USD 1.4443
2000 : USD 1.4298
2500 : USD 1.4156
3000 : USD 1.4014
4000 : USD 1.3119
5000 : USD 1.2988
10000 : USD 1.2858
20000 : USD 1.273

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.859
10 : USD 2.1168
25 : USD 1.998
100 : USD 1.7064
500 : USD 1.3932
1000 : USD 1.1556
2500 : USD 1.1232

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SUP70060E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP70060E-GE3 and other electronic components in the MOSFETs category and beyond.

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SUP70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.0058 at V = 10 V 131 GS 100 53.5 nC 100 % R and UIS tested g 0.0064 at V = 7.5 V 129 GS Material categorization: for definitions of compliance please see TO-220AB www.vishay.com/doc 99912 APPLICATIONS D Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting G Synchronous rectification SS D DC/DC converter G Top View Motor drive switch Ordering Information: S DC/AC inverter SUP70060E-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 131 C Continuous Drain Current (T = 150 C) I J D T = 125 C 75 C A Pulsed Drain Current (t = 100 s) I 240 DM Avalanche Current I 50 AS L = 0.1 mH a Single Avalanche Energy E 125 mJ AS b T = 25 C 200 C a Maximum Power Dissipation P W D b T = 125 C 66.6 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.75 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). S16-0244-Rev. A, 15-Feb-16 Document Number: 65382 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUP70060E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C - - 100 DSS DS GS J V = 100 V, V = 0 V, T = 175 C - - 2 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 90 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0048 0.0058 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 30 A - 0.0050 0.0064 GS D a Forward Transconductance g V = 15 V, I = 30 A - 85 - S fs DS D b Dynamic Input Capacitance C - 3330 - iss Output Capacitance C V = 0 V, V = 50 V, f = 1 MHz - 1395 - pF oss GS DS Reverse Transfer Capacitance C -95- rss c Total Gate Charge Q - 53.5 81 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 30 A - 14.5 - nC gs DS GS D c Gate-Drain Charge Q -13.2- gd Gate Resistance R f = 1 MHz 0.9 1.9 3.8 g c Turn-On Delay Time t -13 26 d(on) c Rise Time t -22 44 r V = 50 V, R = 1.67 DD L ns I 30 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -2754 d(off) c Fall Time t -9 18 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 240 A SM a Forward Voltage V I = 30 A, V = 0 V - 0.86 1.4 V SD F GS Reverse Recovery Time t - 88 176 ns rr Peak Reverse Recovery Charge I I = 30 A, di/dt = 100 A/s -5 10 A RM(REC) F Reverse Recovery Charge Q - 0.22 0.44 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0244-Rev. A, 15-Feb-16 Document Number: 65382 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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