SUP80090E www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.0094 at V = 10 V 128 GS 150 63 nC 100 % R and UIS tested g 0.0110 at V = 7.5 V 119 GS Material categorization: for definitions of compliance please see TO-220AB www.vishay.com/doc 99912 APPLICATIONS D Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting G Synchronous rectification SS D DC/DC converter G Top View Motor drive switch Ordering Information: S DC/AC inverter SUP80090E-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET Solar micro inverter Class D audio amplifier ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 150 DS V Gate-Source Voltage V 20 GS T = 25 C 128 C Continuous Drain Current (T = 150 C) I J D T = 125 C 74 C A Pulsed Drain Current (t = 100 s) I 240 DM Avalanche Current I 60 AS L = 0.1 mH a Single Avalanche Energy E 180 mJ AS b T = 25 C 375 C a Maximum Power Dissipation P W D b T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). S16-0087-Rev. A, 25-Jan-16 Document Number: 65384 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUP80090E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 150 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 150 V, V = 0 V, T = 125 C - - 100 DSS DS GS J V = 150 V, V = 0 V, T = 175 C - - 2 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 90 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0078 0.0094 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 30 A - 0.0087 0.0110 GS D a Forward Transconductance g V = 15 V, I = 30 A - 52 - S fs DS D b Dynamic Input Capacitance C - 3425 - iss Output Capacitance C V = 0 V, V = 75 V, f = 1 MHz - 535 - pF oss GS DS Reverse Transfer Capacitance C -26- rss c Total Gate Charge Q -63 95 g c Gate-Source Charge Q V = 75 V, V = 10 V, I = 60 A - 19.5 - nC gs DS GS D c Gate-Drain Charge Q -20.5- gd Gate Resistance R f = 1 MHz 1.5 3 5 g c Turn-On Delay Time t -15 30 d(on) c Rise Time t - 114 220 r V = 75 V, R = 1.25 DD L ns I 60 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -2856 d(off) c Fall Time t -8 16 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 240 A SM a Forward Voltage V I = 30 A, V = 0 V - 0.73 1.2 V SD F GS Reverse Recovery Time t - 110 220 ns rr Peak Reverse Recovery Charge I I = 30 A, di/dt = 100 A/s -10 20 A RM(REC) F Reverse Recovery Charge Q -0.5 1 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0087-Rev. A, 25-Jan-16 Document Number: 65384 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000