X-On Electronics has gained recognition as a prominent supplier of SUP90N04-3M3P-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUP90N04-3M3P-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUP90N04-3M3P-GE3 Vishay

SUP90N04-3M3P-GE3 electronic component of Vishay
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Part No.SUP90N04-3M3P-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40 Volts 90 Amps 125 Watts
Datasheet: SUP90N04-3M3P-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.7222
10 : USD 2.2542
100 : USD 1.755
500 : USD 1.5366
1000 : USD 1.2714
2500 : USD 1.2714
N/A

Obsolete
0
MOQ : 500
Multiples : 500
500 : USD 1.2733
1000 : USD 1.2605
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.8724
10 : USD 2.3875
100 : USD 1.8528
500 : USD 1.6165
1000 : USD 1.343
2500 : USD 1.2435
5000 : USD 1.2049
10000 : USD 1.1589
25000 : USD 1.1129
N/A

Obsolete
0
MOQ : 7
Multiples : 1
7 : USD 3.3315
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUP90N04-3M3P-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP90N04-3M3P-GE3 and other electronic components in the MOSFETs category and beyond.

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SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ( ) Q (Typ.) I (A) DS DS(on) g Definition D = 10 V TrenchFET Power MOSFET 0.0033 at V 90 GS 40 87 100 % R and UIS Tested 0.0041 at V = 4.5 V g 90 GS Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Power Supply - Secondary Synchronous Rectification DC/DC Converter D GD S G Top View Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V V Gate-Source Voltage 20 GS d T = 25 C C 90 Continuous Drain Current (T = 150 C) I J D d T = 70 C C 90 A Pulsed Drain Current I 160 DM I Avalanche Current 60 AS a L = 0.1 mH E 180 mJ Single Avalanche Energy AS b T = 25 C 125 C a P W Maximum Power Dissipation D c T = 25 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 1 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 65902 www.vishay.com S11-2042-Rev. B, 17-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP90N04-3m3P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 DS DS D V V V = V , I = 250 A Gate Threshold Voltage 12.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I V = 40 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 40 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 22 A 0.0027 0.0033 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0034 0.0041 GS D a g V = 15 V, I = 20 A 169 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5286 iss Output Capacitance C V = 0 V, V = 20 V, f = 1 MHz 705 pF oss GS DS C Reverse Transfer Capacitance 283 rss c Q 87 131 Total Gate Charge g c Q V = 20 V, V = 10 V, I = 20 A Gate-Source Charge 15.3 nC gs DS GS D c Q 12.2 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 0.5 2.7 5.4 g c t 11 20 Turn-On Delay Time d(on) c t Rise Time V = 20 V, R = 2 714 r DD L ns c I 10 A, V = 10 V, R = 1 t D GEN g 45 68 Turn-Off Delay Time d(off) c t Fall Time 714 f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C I Continuous Current 90 S A I Pulsed Current 160 SM a V I = 10 A, V = 0 V Forward Voltage 0.72 1.2 V SD F GS t Reverse Recovery Time 42 63 ns rr I I = 10 A, dI/dt = 100 A/s Peak Reverse Recovery Current 2.5 3.8 A RM(REC) F Q Reverse Recovery Charge 52 78 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65902 2 S11-2042-Rev. B, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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