SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ( ) Q (Typ.) I (A) DS DS(on) g Definition D = 10 V TrenchFET Power MOSFET 0.0033 at V 90 GS 40 87 100 % R and UIS Tested 0.0041 at V = 4.5 V g 90 GS Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Power Supply - Secondary Synchronous Rectification DC/DC Converter D GD S G Top View Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V V Gate-Source Voltage 20 GS d T = 25 C C 90 Continuous Drain Current (T = 150 C) I J D d T = 70 C C 90 A Pulsed Drain Current I 160 DM I Avalanche Current 60 AS a L = 0.1 mH E 180 mJ Single Avalanche Energy AS b T = 25 C 125 C a P W Maximum Power Dissipation D c T = 25 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient (PCB Mount) 40 thJA C/W R Junction-to-Case (Drain) 1 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Package limited. Document Number: 65902 www.vishay.com S11-2042-Rev. B, 17-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP90N04-3m3P Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 DS DS D V V V = V , I = 250 A Gate Threshold Voltage 12.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 250 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I V = 40 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 40 V, V = 0 V, T = 150 C 250 DS GS J a I V 10 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 22 A 0.0027 0.0033 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0034 0.0041 GS D a g V = 15 V, I = 20 A 169 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5286 iss Output Capacitance C V = 0 V, V = 20 V, f = 1 MHz 705 pF oss GS DS C Reverse Transfer Capacitance 283 rss c Q 87 131 Total Gate Charge g c Q V = 20 V, V = 10 V, I = 20 A Gate-Source Charge 15.3 nC gs DS GS D c Q 12.2 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 0.5 2.7 5.4 g c t 11 20 Turn-On Delay Time d(on) c t Rise Time V = 20 V, R = 2 714 r DD L ns c I 10 A, V = 10 V, R = 1 t D GEN g 45 68 Turn-Off Delay Time d(off) c t Fall Time 714 f b Drain-Source Body Diode Ratings and Characteristics T = 25 C C I Continuous Current 90 S A I Pulsed Current 160 SM a V I = 10 A, V = 0 V Forward Voltage 0.72 1.2 V SD F GS t Reverse Recovery Time 42 63 ns rr I I = 10 A, dI/dt = 100 A/s Peak Reverse Recovery Current 2.5 3.8 A RM(REC) F Q Reverse Recovery Charge 52 78 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65902 2 S11-2042-Rev. B, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000